【作者】 魏雄邦； 王涛； 吴志明； 蒋亚东；

【Author】 WEI Xiongbang WANG Tao WU Zhiming JIANG Yadong (School of Optoelectronic Information,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology,Chengdu 610054)

【机构】 电子科技大学光电信息学院电子薄膜与集成器件国家重点实验室；

【摘要】 在氧化钒薄膜的直流磁控溅射制备中,氩流量是影响沉膜工艺以及薄膜织构和性能的重要因素之一。从氧化钒薄膜制备角度出发,研究了纯氩环境以及氧流量恒定的氩氧混合环境中溅射电压和薄膜沉积速率随氩流量的变化。实验结果有助于对氧化钒薄膜制备工艺进行优化,为氩气流量的选择提供参考。更多还原

【Abstract】 Argon flux is one of the important factors influencing the preparing technology,the texture and properties of thin films during the preparation of vanadium oxide thin films by DC magnetron sputtering method.In this paper,from the view of preparation of vanadium oxide thin films,we studied the change of sputtering voltage and deposition rate with the argon flux in single pure argon condition and mixed conditions of oxygen and argon with con- stant oxygen flux respectively.The experiment results are helpful to optimize the preparing technology and select argon flux during the preparation of the vanadium oxide thin films.更多还原