【作者】 徐传明； 许小亮； 谢家纯； 徐军； 杨晓杰； 冯叶； 黄文浩； 刘洪图；

【Author】 Xu Chuanming ,Xu Xiaoliang,Xie Jiachun,Xu Jun,Yang Xiaojie,Feng Ye,Huang Wenhao and Liu Hongtu Department of Precision Machinery and Precision Instrumentation, University of Science and Technology of China, Hefei, 230027, China; Structure Research Laboratory, University of Science and Technology of China, Academic Sinica, Hefei, 230026, China; Department of Physics, University of Science and Technology of China, Hefei ,230026, China

【机构】 中国科学技术大学精密机械与精密仪器系； 中国科学院中国科学技术大学结构分析重点实验室； 中国科学技术大学物理系；

【摘要】 讨论了Ga含量对四元有序缺陷化合物Cu(In,Ga)3Se5薄膜结构的影响。Ga含量的增加引起晶格扭曲系数η近似按抛物线形式增加,而其晶格常数a与c呈线性减小趋势,同时(112),(220)／(204)等主衍射峰的位置和强度呈现显著的改变。而样品厚度的改变会导致薄膜中存在不同的内应力,最终对薄膜的结构产生了显著影响。更多还原

【Abstract】 Quaternary ordered-defect compounds Cu(In,Ga)3Se5 films were grown by RF magnetron sputtering on glass substrate. Influence of Ga content on microstructures of the film was studied with X-ray diffraction.The results show that variations in Ga content significantly affect the lattice parameters,including its tetragonal distortion coefficient η and its lattice constants: a and c.For instance,as Ga content increases, η approximately varies in a parabola way; whereas the lattice constants, a and c ,linearly decrease. Moreover, the intensity and 2θ of the main diffraction peaks,such as (112),and (220)/(204)peaks,drastically change.Interesting finding is that changes in the film thickness considerably affect the non-uniform stress distribution, which in turn alters the microstructures of the films.更多还原