【作者】 李丽； 方亮； 廖克俊； 刘高斌； 杨丰帆； 付光宗；

【Author】 Li Li,Fang Liang ,Liao Kejun,Liu Gaobin,Yang Fengfan and Fu Guangzong (Department of Applied Physics, Chongqing University, Chongqing, 400044, China)

【机构】 重庆大学应用物理系；

【摘要】 本文采用直流反应磁控溅射方法在平面玻璃上制备了ZnO薄膜。所得的ZnO薄膜利用X光衍射,扫描电子显徽镜和原子力显微镜进行分析和表征。实验结果表明,ZnO薄膜的结构和电学性质与合成条件密切相关。并测试了ZnO薄膜的温差电动势,得出薄膜中的载流子浓度越大,温差电动势率越小;ZnO薄膜厚度越大,温差电动势率越小。本文对其结果进行了理论分析。更多还原

【Abstract】 ZnO films,grown by dc magnetron sputtering on glass, were characterized with X-ray diffraction (XRD) ,scanning electron microscopy (SEM) and atomic force microscopy (AFM). Its thermo-electromotive force was measured also.The results show that film growth conditions strongly affect its microstnlctures and its electrical properties. We found that an increase of the carrier concentration and/or the film thickness results in a decrease of the thermo-power. And possible mechanism was tentatively discussed.更多还原