【作者】 李静波； 饶光辉； 张毅； 刘广耀； 张芹； 肖荫果； 陈景然； 梁敬魁；

【Author】 Li Jing-Bo, Rao GuangHui, Zhang Yi, Liu GuangYao, Zhang Qi, Xiao YinGuo, Chen JingRan, Liang JingKui Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Science, Beijing 100080, China

【机构】 中国科学院物理研究所A03；

【摘要】 采用四亚点阵模型对Mg掺杂p-型GaN中掺杂Mg、H、点缺陷和载流子进行了热力学描述。以第一性原理计算结果为基础,通过实验数据的热力学优化得到物种的特征热力学函数,计算与实验符合较好。利用优化得到的热力学数据对Mg掺杂p-型GaN半导体体系进行热力学分析,探讨了导致 Mg掺杂p-型GaN低霍尔浓度的原因。更多还原

【Abstract】 A thermodynamic modelling of Mg-doped p-type GaN was carried out to describe the thermodynamic behaviors of native defects, dopants (Mg and H) and carriers (free electrons and holes) in GaN. Optimization of the Gibbs energy of the GaN phase was performed using the evaluated experimental data with the aid of the results of the first-principle calculation. Thermodynamic analysis of Mg-doped GaN was conducted using the obtained thermodynamic parameters. Calculations fit well with the experimental data. The reason that results in the low hole-concentration of Mg-doped p-type GaN was discussed.更多还原