【作者】 杨冬； 王非； 翟雷应； 梁建； 马淑芳； 许并社；

【Author】 YANG Dong , WANG Fei , ZHAI Lei-ying , LIANG Jian, MA Shu-fang, XU Bing-she (College of Materials Science and Engineering, Taiyuan University of Technology, Taiyuan 030024,China ; Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education,Taiyuan 030024,China)

【机构】 太原理工大学材料科学与工程学院； 太原理工大学新材料界面科学与工程教育部重点实验室；

【摘要】 采用CVD方法,以金属镓和氨气为原料,金属镍为催化剂,在Si(111)衬底上成功制备出了大量的 GaN纳米带。采用场发射扫描电镜(FESEM)、能量散射谱(EDS)仪争高分辨透射电镜(HRTEM)对样品进行了成分、形貌和结构分析。结果表明:制备的GaN 蚋米带为六方纤锌矿结构,其宽度在80-150nm范围内,厚度在3-10nm范围内,长度达到几十微米,并且对生长机理进行了讨论。更多还原

【Abstract】 GaN nanobelts were synthesized by direct reaction of gallium with flowing ammonia using nickel as a catalyst. Field emission scanning electron microscopy (FESEM) equipped with an energy dispersive spectrosco py (EDS) and high resolution transmission electron microscopy (HRTEM) were used to characterize the samples. The results showed that the products are hexagonal wurtzite structure. The width of the nanobelts are in the range of 80-150nm, the thickness ranged from 3 nm to 10nm and and their lengths can be up to several tens of microns. The growth mechanism of the GaN nanobelts was discussed.更多还原