【作者】 李志中； 陈光华； 何斌； 郜志华； 张晓康； 丁毅； 张岩； 周涛； 邓金祥；

【Author】 LI Zhi-zhong, CHEN Guang-hua, HE Bin, GAO Zhi-hua, ZHANG Xiao-kang, DING Yi,ZHANG Yan,ZHOU Tao ,DENG Jin-xiang (School of Materials Science & Engineering, Beijing University of Technology, Beijing 100022, China) School of Applied Mathematics & Physics, Beijing University of Technology, Beijing 100022, China) School of Physics, Lanzhou University, Lanzhou 730000,China)

【机构】 北京工业大学材料学院； 兰州大学物理学院； 北京工业大学应用数理学院；

【摘要】 用射频溅射系统制备了c-BN薄膜,并且用离子注入的方法在c-BN薄膜中注入Be,制备了p-c-BN／p- Si薄膜同型异质结,并研究了异质结的电学性质。注入 Be的c-BN薄膜是采用传统的13．56MHz射频溅射系统, 用h-BN(纯度为99．8％)为靶材,在p型Si(100)衬底上沉积得到的。离子注入时,注入离子的能量为100keV,注入剂量为1015ions／cm2。薄膜注入后经800℃退火后,在异质结表面蒸镀了2mm×5mm铝电极。测量了其电学性质。实验结果表明:离子注入掺杂后制备的p-c-BN／p-Si 同型异质结的I-V曲线具有明显的整流特性,其正向导电特性的拟合结果表明,异质结的电流电压方程接近二极管电流电压方程。计算得到c-BN薄膜层中的受主浓度为 2．04×1013／cm3。更多还原

【Abstract】 p-c-BN/p-Si thin film heterojunctions have been fabricated. BN films were deposited on p-type Si wafers using RF reactive sputter, and were doped into n-type semiconductor by implanting ions into them. The energy of implantation of ions is 100keV, and the dose of implantation is1015ions/cm2. The p-c-BN/p-Si thin film heteroj unctions have been annealed at the temperature of 800℃. The I-V (current-voltage) characteristics have obvious rectification. The fitting results show that current transporting model for the p-c-BN/p-Si thin film het-erojunctions is the same as current-voltage equation of diode and the donor concentration is 2. 04×1013/cm3 in the c-BN films.更多还原