【作者】 郜志华； 陈光华； 李志中； 邓金祥； 丁毅；

【Author】 GAO Zhi-hua, CHEN Guang-hua ,LI Zhi-zhong ,DENG Jin-xiang, DING Yi (School of Materials Science & Engineering, Beijing University of Technology, Beijing 100022, China; School of Applied Mathematics & Physics, Beijing University of Technology, Beijing 100022, China; School of Physics, Lanzhou University, Lanzhou 730000,China)

【机构】 北京工业大学材料学院； 北京工业大学应用数理学院； 兰州大学物理学院；

【摘要】 采用微波电子回旋共振等离子体增强化学气相沉积(MW-ECR CVD)法,BF3-H2-N2-Ar为反应气体,制备立方氮化硼薄膜。应用傅立叶红外光谱 (FTIR),定性地研究通入的H2和N2流量对制备的立方氮化硼薄膜结构的影响。发现在BF3-H2-N2-Ar 气体系统中,H2对立方氮化硼薄膜结构的影响比较明显,而N2的影响没有那么明显。并对MW-ECR CVD 制备立方氮化硼薄膜的结构特性进行了初步分析。更多还原

【Abstract】 The preparation of cubic boron nitride films by using electron-cyclotron-resonance-enhanced-micro wave-plasma chemical vapor deposition (MW-ECR CVD). We put forward the qualitative analysis of influences of the flux of N2 and H2 on the configuration of cubic boron nitride films by Fourier transform infrared spec trometry (FTIR). It was found that H2 played an important role on the configuration of cubic boron nitride films in the BF3-H2-N2-Ar gaseous system. But N2 didn’t show obvious infection. We analyzed the characteristic of the configuration of cubic boron nitride films prepared by MW- ECR CVD in primary.更多还原