【作者】 谷志刚； 王东生；

【Author】 GU Zhi-gang, WANG Dong-sheng (College of science, Nanjing University of Aeronautics & Astronautics, Nanjing 210016,China)

【机构】 南京航空航天大学理学院；

【摘要】 随着半导体技术的飞速发展,传统的SiO2 无法克服由MOSFET、器件特征尺寸的不断缩小所带来的量子隧穿效应的影响,从而极大地制约了微电子器件集成度的提高。因此寻找新一代MOSFET栅极电介质材料来取代SiO2已经成为人们研究的热门课题。文章总结了新型bigh-k材料所需满足的性能要求,介绍了近年主要high-k材料的研究成果,并综述了新一代MOSFET栅极电介质薄膜材料LaAlO3的研究进展。更多还原

【Abstract】 With the rapid development of semiconductor, traditional SiO2 gate dielectric materials fail to overcome the influence brought on by the quantum-mechanical tunneling-effect, which is induced by the further scaling-down of the MOSFET devices, and then improving the integration of microelectronic devices are greatly restricted. Therefore, searching for a new kind of MOSFET gate dielectric materials to replace SiO2 has become a hot researching subject. This paper generalizes the property requirements that the novel high-k materials have to fulfill, and introduces the researching fruit of the main high-k materials in recent years. It also summarizes the latest development of the next hopeful generation MOSFET gate dielectric material LaAIO3 films.更多还原