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功率和温度对a-C∶F∶H膜表面形貌和结构的影响

Effect to the surface morphology and configuration of the a-C: F: H thin films by deposition RF-power and temperature

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【作者】 肖剑荣徐慧刘雄飞马松山

【Author】 Xiao Jian-rong Xu Hui Liu Xiong-fei Ma Song-shan (1 School of physics science and technology, Central South University, Changsha Hunan, 410083)

【机构】 中南大学物理科学与技术学院

【摘要】 分析薄膜的表面形貌对其生长机理和光学性质研究有着十分重要的作用。本文使用CF4和CH4的混和气为源气体.利用射频等离子体增强化学气相沉积(RF-PECVD)法在不同射频功率和沉积温度下制备了掺氟氢化无定形碳(a-C:F:H)薄膜,并在N2气氛中进行了不同温度的退火处理。用原子力显微镜(AFM)和扫描电子显微镜(SEM)观察了薄膜表面形貌.发现低功率下沉积的薄膜表面均匀性好、缺陷少:在低温下沉积的薄膜表面光滑,而高温下粗糙:真空低温退火可使薄膜表面形貌得到改善,但薄膜内空洞增加,退火温度过高,薄膜的结构发生变化,且在薄膜表面发生皲裂现象.用Raman光谱对薄膜内的结构变化进行了进一步的分析发现,该膜呈空间网状结构,膜内碳与氟、氢的结合主要以sp3形式存在,而sp2形式的含量相对较少。

【Abstract】 Investigation of the surface morphology of the thin solid films is of great importance in study growth mechanism and optics properties. Fluorinated amorphous hydrogenated (a-C: F: H) carbon thin films were deposited using radio frequency plasma enhance chemical vapor deposition (RF-PECVD) reactor with CF4 and CH4 as source gases in different RF-power and deposition temperature and they were deal with thermal annealing in a N2 environment. In order to investigate the surface morphology, AFM and SEM images were taken of these films before and after thermal annealing and found that the surface of the film after thermal treatment reveals a less compact structure and becomes more flatness. The thin films deposited with low RF-power and low temperature were equality and with few disfigurement and the thin films cracked with high annealing temperature. In order to investigate the structure of the films, Raman spectroscopy was taken and we found that the content of the hybrid-bonding configuration of sp3 was more than that of sp2.

  • 【会议录名称】 2005’全国真空冶金与表面工程学术会议论文集
  • 【会议名称】2005’全国真空冶金与表面工程学术会议
  • 【会议时间】2005-07
  • 【会议地点】中国沈阳
  • 【分类号】TB383
  • 【主办单位】中国真空学会真空冶金专业委员会
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