【作者】 王宁； 李楠； 王超群； 余怀之；

【Author】 WANG Ning, LI Nan, WANG Chao-qun, YU Huai-zhi (General Research Institute for Nonferrous Metals, Beijing 100088, China)

【机构】 北京有色金属研究总院；

【摘要】 ZnS是宽禁带Ⅱ-Ⅵ族化合物半导体材料,兼有立方闪锌矿(β晶型)和六方纤锌矿(α晶型)两种结构。β- ZnS具有良好的红外透过性能,但在制备过程中,α-ZnS的出现会影响红外透过性能以及镀膜性能,因此,监测这类材料的物相含量十分必要。为此,本研究中采用X射线衍射中的Rietveld分析方法模拟测算这类材料的物相含量,结果表明:模拟计算的α-ZnS含量数据与实测值相符。该法的优点是无损、无标和快速测定,而且可以用于提取材料的微结构信息,如晶粒度、晶格畸变以及层错结构缺陷等信息,对于ZnS半导体红外材料的优化制备以及性能改善具有重要的意义。更多还原

【Abstract】 ZnS is a kind of Ⅱ-Ⅵ group compound semi-conducting material with two type structures of α-ZnS and β-ZnS. The phase constituents of ZnS target are important to the quality control of infrared optical product. In order to determine the phase content of α-ZnS. the standard X-ray diffraction patterns of the α-ZnS, β-ZnS are calculated analogically by using Rietveld method. Based on multi-phase mode and Rietveld method, the phase content of ZnS infrared optical material was determined. The result shows that the content of the α-ZnS obtained by analogue calculation in ZnS target material is in accordance with that obtained by experimental determination. The analytical method can be recommended in the phase content and the microstructural analysis of other metal and alloy seriers.更多还原