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Fabrication of (001)-textured BaTiO3 Thin Films on Silicon Substrate

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【作者】 魏贤华

【Author】 Wei Xianhua Li Yanrong Li Jinlong Zhu Jun Liang Zhu Zhang Ying( School of Microelectronics and Solid - state Electronics, University of Electronic Science and Technology of China, Chengdu, 610054)

【机构】 成都电子科技大学微电子与固体电子学院

【摘要】 <正> MgO ultrathin films were grown on Si(100) substrates as buffer layers for the growth of ferroelectric BaTiO3 thin films by laser molecular beam epitaxy ( L-MBE) . The buffer layers were biaxial-ly textured confirmed by in-situ reflection high - energy electron diffraction ( RHEED). XRD results showed that the over deposited BaTiO3 films fabricated on the buffered-silicon substrates were (001) textured. The MgO buffers and BaTiO3 films had atomically smooth surface and interface according to atomic form microscope (AFM) experiments. Furthermore, the measurements of angle-resolved X-ray photoelectron spectroscopy (ARXPS) indicated that the thinnest MgO buffer to prevent interdiffusion and induce the growth of ferroelectric films was found to be about three unit cells, and secondary ion mass spectrometry (SIMS) also revealed the validity of the buffers.

【Abstract】 MgO ultrathin films were grown on Si(100) substrates as buffer layers for the growth of ferroelectric BaTiO3 thin films by laser molecular beam epitaxy ( L-MBE) . The buffer layers were biaxial-ly textured confirmed by in-situ reflection high - energy electron diffraction ( RHEED). XRD results showed that the over deposited BaTiO3 films fabricated on the buffered-silicon substrates were (001) textured. The MgO buffers and BaTiO3 films had atomically smooth surface and interface according to atomic form microscope (AFM) experiments. Furthermore, the measurements of angle-resolved X-ray photoelectron spectroscopy (ARXPS) indicated that the thinnest MgO buffer to prevent interdiffusion and induce the growth of ferroelectric films was found to be about three unit cells, and secondary ion mass spectrometry (SIMS) also revealed the validity of the buffers.

【Key words】 BaTiO3 thin filmbuffer layertextureRHEED
【基金】 国家“973”项目资助(No.51310z03)
  • 【会议录名称】 2004年材料科学与工程新进展
  • 【会议名称】2004年中国材料研讨会
  • 【会议时间】2004-11
  • 【会议地点】中国北京
  • 【分类号】TB43
  • 【主办单位】中国材料研究学会
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