Ion Beam Synthesis of FeSi₂-Microstructures and Light Emission Properties

【作者】 S.P.Wong；

【Author】 S. P. Wong Dept. of Electronic Engineering & Materials Science and Technology Research Centre,The Chinese University of Hong Kong, Hong Kong SAR, China

【机构】 Dept.of Electronic Engineering & Materials Science and Technology Research Centre,The Chinese University of Hong Kong, Hong Kong SAR, China；

【摘要】 <正>The study of semiconducting FeSi2 has attracted increasing attention in recent years for its potential applications as a silicon-based light emitting material. In this work, we shall report on some recent progress made in our laboratory on the fabrication of FeSi2 by ion beam synthesis using a metal vapor vacuum arc ion source. In particular, we shall describe in some details how the phases and microstructures of FeSi2, as well as their orientation relationship with the Si substrate, are dependent on the implantation temperature and the annealing conditions. We shall show that the photoluminescence (PL) properties are correlated with the silicon defects introduced by the implantation and annealing processes. Hence, the origins of the PL spectra can be identified. Simple device structures were fabricated and some preliminary results on the electroluminescence (EL) properties were obtained with clear EL signals observed even at room temperature. Possible mechanisms of the EL emission will be discussed. This work is supported in part by the Research Grants Council of Hong Kong SAR (ref. no. CUHK 4231/03E).更多还原

【Abstract】 The study of semiconducting FeSi2 has attracted increasing attention in recent years for its potential applications as a silicon-based light emitting material. In this work, we shall report on some recent progress made in our laboratory on the fabrication of FeSi2 by ion beam synthesis using a metal vapor vacuum arc ion source. In particular, we shall describe in some details how the phases and microstructures of FeSi2, as well as their orientation relationship with the Si substrate, are dependent on the implantation temperature and the annealing conditions. We shall show that the photoluminescence (PL) properties are correlated with the silicon defects introduced by the implantation and annealing processes. Hence, the origins of the PL spectra can be identified. Simple device structures were fabricated and some preliminary results on the electroluminescence (EL) properties were obtained with clear EL signals observed even at room temperature. Possible mechanisms of the EL emission will be discussed. This work is supported in part by the Research Grants Council of Hong Kong SAR (ref. no. CUHK 4231/03E).更多还原