【作者】 张万昌； 丁洪林； 何高魁； 黄小健； 王英；

【Author】 ZHANG Wan-chang,DING Hong-lin,HE Gao-kui,HUANG Xiao-jian,WANG Ying (China Institute of Atomic Energy,P.O.Box 275-25,Beijing 102413,China)

【机构】 中国原子能科学研究院；

【摘要】 叙述了采用传统的平面工艺技术制备的快响应电流型Si探测器的制备工艺。为了提高探测器的时间响应,对300μm厚的探测器进行了适当的减薄处理。给出了不同探测器样品减薄处理前后的漏电流测量结果及厚度100μm,灵敏面积为10、25mm2的探测器在300V反向偏压下对241Amα粒子电流响应测量结果。更多还原

【Abstract】 This paper describes the processing method of fast response low energy X-ray current-type silicon detectors manufactured by conventional planar technology. In order to obtain fast response time, we thinned several 300μm thick detectors to 100μm thick. The paper gives the leakage current measurements of different detector samples before and after thinned. The measurement results of the current responses of 100μm thick, 10 and 25mm2 area detectors to 241 Am aparticles when biased 300V are also provided.更多还原