【作者】 黎建明； 屠海令； 郑安生；

【Author】 Li Jian-ming, Tu Hai-ling, Zheng An-sheng (National Engineering Research Center for Semiconductor Materials General Research Institute for Non-ferrous Metals, Beijing, 100088, China)

【机构】 国家半导体材料工程研究中心北京有色金属研究总院；

【摘要】 LEC法生长的轻掺铬高阻GaAs 晶体熔融KOH腐蚀坑SEM观察结果表明,轻掺Cr-GaAs晶体位错的径向分布呈“W”型。这是由于GaAs单晶生长过程中,晶体中的热弹应力的“W”分布和位错大量增殖时所需的临界应力共同作用的结果。红外透射测量结果表明:当位错密度不太高时,位错引入的电子态的体密度低,位错的径向分布对红外透过率的影响很小;当位错密度很高时,其对红外透过率的影响不可忽视。更多还原

【Abstract】 By SEM physiognomy of X-ray diffraction, dislocation distributions across lightly Cr doped GaAs crystals grown by the liquid encapsulated Czochralski (LEC) have been investigated. the SEM results of etched pit density (EPD) of the radiated GaAs wafer by preferential etching with KOH melt show the "W"linear profiles of lightly chromium doped GaAs crystals; The infrared transmission results of optical processing GaAs samples show that the effect of EPD on infrared transmission can be neglected if the value of EPD is less than 5×106cm2.更多还原