【作者】 路险峰； 李金钗； 郭怀喜； 张志宏； 叶明生；

【Author】 LU Xian-feng;LI Jin-chai;GUO Huai-xi;ZHANG Zhi-hong;YE Ming-sheng Physics Department of Wuhan University Wuhan, 430072, China

【机构】 武汉大学物理科学与技术学院；

【摘要】 采用低压等离子体增强化学气相沉积法（LP-PECVD）制备氮化碳薄膜;低能离子注入机对制备的薄膜进行N₂⁺注入掺杂.X射线光电子能谱（XPS）分析了N₂⁺注入前后氮化碳薄膜中N、C的含量及其结合能的变化情况;10^-6Pa超高真空下对注入前后的氮化碳薄膜进行了电子场发射测试,发射起始场强≤2.5V/μm,稳定发射电流≥1mA/cm²;结果表明,经N₂⁺注入后的氮化碳薄膜的电子场发射特性得到明显增强.更多还原

【Abstract】 CN_x thin films were prepared by Low Pressure Plasma Enhanced Chemical Vapor Deposition （LP-PECVD）system. Low energy N₂⁺ ions were implanted into CN_x films. Samples before and after implantation were characterizedby XPS. The electron field emission characteristics of CN_x films with and without N₂⁺ implantation were obtainedunder the pressure of 10^-6Pa. The onset emission field was less than 2.5 V/μm and the stable current was above1mA/cm². The electron field emission characteristics were improved due to the implantation of N₂⁺.更多还原