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带基板NiTi薄膜的应力状态及微观组织
Stress State and Microstructure in NiTi Shape Memory Thin Films with Wafer
【作者】 吴廷斌; 江伯鸿; 漆璿; 刘毓舒; 王莉; 徐东;
【Author】 WU Ting-bin;JIANG Bo-hong;QI Xuan;LIU Yu-shu;WANG Li;XU Dong Key Lab of Education Ministry for High-Temperature Materials and Testing Key Lab of Education Minisny for Thin Film and Micro-Manufacture Techno1ogy Shanghai Jiao Tong University Shanghai, 200030, China
【机构】 上海交通大学教育部高温材料及高温测试重点实验室; 上海交通大学教育部微细加工与技术开放实验室;
【摘要】 研究了带基板磁控溅射富钛NiTi薄膜经不同温度晶化后的的微观组织和结构、相变温度及薄膜的应力状态.结果发现:带基板晶态薄膜中存在拉仲残余应力,且随晶化温度降低而增高,这是由于加热和冷却过程中的热应力、晶化和保温过程中的晶化应力和应力松弛效应以及冷却时形成马氏体的相变应力等的综合结果.在较低温度晶化的薄膜中呈现明显的放射状花样组织,这与在压应力场下晶化择优成长有关.
【Abstract】 The residual stress and microstructure of Ti-rich NiTi thin films with wafer which is prepared with RFmagnetic sputtering deposition and crystallized under different temperatures are analyzed. The evolution of stress withcrystallization temperature is considered to be caused by the thermal stress, crystallization stress, martensitetransformation stress and stress relaxation among films under high temperatures. A type of remarkable radiatingstructure is observed in crystallized NiTi thin films with wafer, which was suggested to be related with the compressivestress in film during crystallization course.
- 【会议录名称】 第四届中国功能材料及其应用学术会议论文集
- 【会议名称】第四届中国功能材料及其应用学术会议
- 【会议时间】2001-10
- 【会议地点】中国厦门
- 【分类号】TB383
- 【主办单位】中国仪器仪表学会仪表材料分会