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钴铬垂直磁化膜的高分辨显微学研究

High Resolution Microscopy Study on the Co-Cr Perpendicular Magnetization Films

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【作者】 潘国宏张小平孙允希王勤堂孙玉秀

【Author】 PAN Guo-hong;ZHANG Xiao-ping;SUN Yun-xi;WANG Qin-tang;SUN Yu-xiu Department of physics, Inst. of Micro-electronic, Beijing University Beijing, 100871, China

【机构】 北京大学物理系微电子所

【摘要】 钴铬薄膜是垂直磁化薄膜的基本品种。国内外研究多限于宏观测试和某些典型的微观分析。结晶结构则认为是非磁铬在磁性钴晶粒间界析出隔离形成钴单畴颗粒的观点。对薄膜结晶结构与磁畴结构关系及其机理的高分辨显微学研究则极少见。本文正是把高分辨透射电镜、能谱分析、原子力显微镜AFM和磁力显微镜MFM等方法结合起来对薄膜的晶粒结构和尺寸、成分分布、磁畴结构和尺寸及单畴颗粒形成机理等问题,着重从高分辨显微学及微磁学理论深入研究,对单畴颗粒形成与结晶结构的关系作了分析,对单畴颗粒形成的临界尺寸作了估算,都得到与实验很好符合的结果。

【Abstract】 Co-Cr film is a baic type of the perpendicular magnetization films. However, Studying on it either in countryof abroad is almost limited within macro measurements and some typical microanalysis. For the crystal structurealmost take the view point where the non-magnetic chromium (Cr) element precipitated at the crystal boundaries of themagnetic cobalt (Co)regions, and thus isolated the cobalt to form cobalt single domaing the relationship between thecrystallites the methods of high resolution TEM, X-ray energy spectrum analysis, atomic force microscopy AFM,magnetic force microscopy MFM. Emphasized on using high-resolution microscopy and micro-magnetism theory tostudy on the film crystal structure and sizes, composition distribution, magnetic domain structure and sizes, and theformation mechanism of the single domain paticles. Based on the high-resolution microscopy and formed the singledomain particle structure, and gave the calculation for the critical diameter for the formation of the single domainparticles. All these obtained very good agreement result with that of the experiments.

  • 【会议录名称】 第四届中国功能材料及其应用学术会议论文集
  • 【会议名称】第四届中国功能材料及其应用学术会议
  • 【会议时间】2001-10
  • 【会议地点】中国厦门
  • 【分类号】TB43
  • 【主办单位】中国仪器仪表学会仪表材料分会
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