【作者】 武莉莉； 蔡伟； 张静全； 郑家贵； 蔡亚平； 黎兵； 邵烨； 冯良桓；

【Author】 Wu lili,Cai wei,Zhang jingquan,Zheng jiagui,Cai yaping,Li bing,Shao ye,Feng lianghuan(Department of Materials Science,Sichuan University, Chengdu Sichuan 610064,China)

【机构】 四川大学材料科学系；

【摘要】 CdS薄膜的结构和光、电性能对CdS/CdTe多晶太阳能薄膜电池有重要影响。本文研究了用CBD法制备的CdS薄膜的结构及其光电特性,着重讨论了退火对薄膜的影响。采用 XRD、 UV/Vis表征薄膜的晶格结构及禁带宽度,并测量了薄膜的光、暗电导率,计算出电导激活能。首次发现在410℃不加 CdCl₂热处理的 CdS膜出现金属镉。用 CdCl₂热处理的薄膜,刚沉积时的立方相结构随退火温度的增加和退火时间的延长被破坏,且出现许多非CdS的杂峰。退火后薄膜的晶粒长大,禁带宽度变窄,光、暗电导率在退火后分别为10^-2～10^-3(Ω^-1.cm^-1)及10^-3～10^-6(Ω^-1.cm^-1)。更多还原

【Abstract】 The structure and the properties of CdS thin films have great influence onpolycrystalline CdTe/CdS thin film solar cells. This paper investigates the structure , the optical and electrical properties of CdS thin films fabricated by CBD technique , especially the influence of thermal treatment on thin film. The structure,grain size and the band gap of CdS films anr studied with XRD and UV/Vis. The photo, dark conductivity are measured and the conductivity activation energy is computed. It is found for the first time that CdS films annealed without CdCl2 at 420℃ show the exit of Cd. Following the increase of annealing temperature and annealing time , the structure of cubic phase in CdS thin film is destroyed and many non-CdS peaks emerge. After the thermal treatment,the grain size of CdS thin film increase and the band-gap becomes narrow. The photo dark conductivity is between 10-2～10-3(Ω-1.cm-1) and 10-3～10-6( Ω-1.cm-1) in respect.更多还原