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溶胶-凝胶法制备SnO2:Sb透明导电膜

Sb-doped SnO2 transparent conducting thin film by the Sol-Gel method

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【作者】 张兴旺赵高扬刘守智

【Author】 Zhang Xingwang Zhao Gaoyang Liu Shouzhi(Department of Material Science & Engineering, Xi’an University of Technology, Xi’an,710048)

【机构】 西安理工大学材料科学与工程学院西安理工大学材料学院

【摘要】 以无机盐为出发原料,采用溶胶-凝胶法制备了掺Sb与未掺Sb的SnO2透明导电薄膜。运用紫外可视分光光度计和四脚探针测试仪分别测试薄膜的透过率和表面电阻。研究了薄膜表面电阻随Sb掺杂量和热处理温度以及透过率随掺杂量的变化关系。得出了溶胶-凝胶法制备SnO2:Sb透明导电薄膜的最佳参数:即掺杂Sb的摩尔分数为8%、400℃空气中热处理后,可得到透光率达到93%,方阻达到460Ω/□的SnO2透明导电薄膜。

【Abstract】 Transparent conducting thin films of SnO2 have been prepared from tin chloride by Sol-Gel dip-coating, and then Sb was doped from antimony chloride. The transmission and surface resistances of the films were measured with U V-Spectrometer and Four-Probe instrument, respecitively. In addition, the influence of the dip coating parameters such as the content of Sb in the Sol and heat treatment temperature on the surface resistances of the films, and the content of Sb on transmission of the films were investigated. The optimal parameters were obtain: that is, the films is doped with x(Sb) = 8% and heated at 400℃. and their surface resistance is 460Ω/□ and light transmission is 93% .

【基金】 陕西省教委重点资助项目(99JK168)。
  • 【会议录名称】 2000年材料科学与工程新进展(上)——2000年中国材料研讨会论文集
  • 【会议名称】2000年中国材料研讨会
  • 【会议时间】2000
  • 【分类号】TB43
  • 【主办单位】中国材料研究学会
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