【作者】 冯伟；

【导师】 熊继军； 梁庭； 雷程；

【作者基本信息】 中北大学 ， 仪器科学与技术， 2021， 硕士

【摘要】 随着应用环境的多元化,为了即时和准确的跟踪被测物体表面原位温度场的变化,同时,要适应平面、曲面等复杂结构。因此,在基于硅晶圆和柔性聚合物的MEMS器件制造技术基础上,研究了在金属探针表面直接进行微细加工制作SiO₂薄膜绝缘层和铂薄膜图形化的工艺。这种工艺技术实现了敏感元件与高曲率物体直接匹配,无需后续转移贴装衬底,减少了周围环境与物体之间的热损耗,提高了器件的工作稳定性。铂（Pt）作为一种常用的贵金属温度敏感材料,由于其良好的热响应、高精确度、高电阻温度系数和较宽的工作温度范围被广泛应用于温度场测量。铂（Pt）还被认为具有生物相容性,因此适合用于医疗应用。据此本文主要研究了以下内容:1、首先掌握了热电阻温度传感器的基本工作原理和方块电阻计算方法,对热敏电阻条、引线以及金属电极的阻值、形状、大小进行设计;然后根据硅基温度传感器的工艺流程,利用L-edit软件设计出版图,并且详细阐述了硅基温度传感器制备过程;最后对硅基温度传感器的电学性能进行测试分析。通过观察发现:硅基铂电阻温度传感器具有极佳的线性度,传感器的灵敏度为0.20%℃^-1和迟滞性误差为0.39。证明了硅基铂薄膜温度传感器工作性能稳定,为后续在柔性衬底上制备传感器奠定基础。2、通过对不同的聚合物衬底进行对比,最终选择在聚酰亚胺基底上制备铂薄膜温度传感器,并对柔性铂薄膜温度传感器的电学性能和机械性能进行测试和分析。根据测得的数据,绘制出柔性温度传感器的电阻温度曲线,可以看出该传感器具有良好的线性度。通过线性拟合得到了传感器灵敏度为1.4729%℃^-1,并且经过三次升温和降温过程,传感器仍具有良好的重复性。通过对聚酰亚胺基底不同程度的弯曲测试,证明该传感器有极佳的机械性能,抗干扰能力强,提高了传感器的精度,方便于传感器在任意弯曲表面的温度监测。3、在制备基于金属探针的铂薄膜温度传感器的过程中,首先利用ICPECVD沉积系统制备出2um的SiO₂薄膜解决了金属探针绝缘问题,再采用喷胶和接近式曝光这两种关键工艺,实现了在探针端面图形化,最后通过溅射、剥离工艺形成结构完整、表面平整的铂薄膜。通过研究对比不同退火温度对传感器电学性能的影响,确定500℃,5min为最为合适的退火条件。通过控制环境因素和退火处理条件使铂薄膜性能得到显著提高,消除整个过程中产生的杂质和缺陷,提高了该传感器的线性度、灵敏度和稳定性。研究基材和退火温度对于在屈曲金属结构表面制造出稳定性高、响应速度快的金属薄膜传感器十分重要。更多还原

【Abstract】 With the diversification of the application environment,in order to track the changes of the in-situ temperature field on the surface of the measured object in real time and accurately,at the same time,it is necessary to adapt to complex structures such as planes and curved surfaces.Therefore,on the basis of the MEMS device manufacturing technology based on silicon wafers and flexible polymers,the process of making SiO₂ thin film insulating layer and platinum thin film patterning directly on the surface of metal probes is studied.This process technology realizes the direct matching of sensitive components with high-curvature objects without subsequent transfer and mounting of the substrate,reducing the heat loss between the surrounding environment and the object,and improving the working stability of the device.As a commonly used precious metal temperature sensitive material,platinum is widely used in temperature field measurement due to its good thermal response,high accuracy,high temperature coefficient of resistance and wide operating temperature range.Platinum is also considered to be biocompatible and therefore suitable for medical applications.Based on this,this article mainly studies the following:1.First,master the basic working principle of the thermal resistance temperature sensor and the calculation method of the square resistance,and design the resistance,shape and size of the thermistor strip,lead and metal electrode;Then,according to the process flow of the silicon-based temperature sensor,L-edit software is used to design the published drawing,and the preparation process of the silicon-based temperature sensor is explained in detail;Finally,the electrical performance of the silicon-based temperature sensor is tested and analyzed.Through observation,it is found that the silicon-based platinum resistance temperature sensor has excellent linearity,the sensitivity of the sensor is 0.20% ℃-1 and the hysteresis error is0.39.It proves that the silicon-based platinum film temperature sensor has stable working performance,which lays the foundation for the subsequent preparation of the sensor on a flexible substrate.2.By comparing different polymer substrates,the platinum film temperature sensor was finally prepared on a polyimide substrate,and the electrical and mechanical properties of the flexible platinum film temperature sensor were tested and analyzed.According to the measured data,the resistance temperature curve of the flexible temperature sensor is drawn,and it can be seen that the sensor has good linearity.Through linear fitting,the sensitivity of the sensor is0.6345% ℃-1,and after three repeated heating and cooling processes,the sensor still has good repeatability.Through different degrees of bending tests on the polyimide substrate,it is proved that the sensor has excellent mechanical properties and strong anti-interference ability,which improves the accuracy of the sensor and facilitates the temperature monitoring of the sensor on any curved surface.3.In the process of preparing the platinum film temperature sensor based on the metal probe,the ICPECVD deposition system is used to prepare a 2um SiO₂ film to solve the insulation problem of the metal probe,and then the two key processes of glue spraying and proximity exposure are used to achieve The end surface of the probe is patterned,and finally a platinum film with a complete structure and a flat surface is formed through sputtering and stripping processes.By studying and comparing the influence of different annealing temperatures on the electrical performance of the sensor,it is determined that 500℃,5min is the most suitable annealing condition.By controlling the environmental factors and annealing treatment conditions,the performance of the platinum film has been significantly improved,The impurities and defects generated in the whole process are eliminated,and the linearity,sensitivity and stability of the sensor are improved.In summary,studying the substrate and annealing temperature is very important for fabricating a metal thin film sensor with high stability and fast response on the surface of a buckled metal structure.更多还原