【作者】 陈权；

【导师】 段力（Franklin Li Duan）； 毛智彪；

【作者基本信息】 上海交通大学 ， 集成电路工程（专业学位）， 2016， 硕士

【摘要】 集成电路制造工艺的关键尺寸随着“摩尔定律”一步步的缩小到了28纳米。这一制程节点是应用双重曝光之前的最后一个世代,所以对光刻与OPC(Optical Proximity Correction,光学邻近效应修正)精确度的要求也更为严格,OPC模型的误差必须被控制在极小的范围内。此外,由于工艺窗口变小,OPC模型需要具备预测全工艺窗口内图形缺陷的能力。本课题选取28纳米版图最复杂的金属层,研究了28纳米OPC模型的特点,分析了影响模型精确度的原因,设计了多组实验来优化模型参数,提高模型精度。本课题首先研究了28纳米OPC模型中的掩模版模型。探讨了掩模版模型主要的参数及其影响,通过实验总结了快速、准确的优化这些参数的方法,优化的掩模版模型大大的提高了OPC模型的精确度。其次,研究了PWOPC(Process Window OPC)模型。通过定义模型数据点对光刻能量/焦距波动的敏感度,筛选出对建立PWOPC贡献大的少量数据点,用于数据收集和建模。在保证模型精度的同时,提高了建模的效率。然后,本课题又分析了28纳米金属层的光刻胶顶部损失的成因,比较了几个光刻胶顶部损失的建模方法,选择使用蚀刻线宽模型来预测光刻胶顶部损失并进行了建模实验,模型的蚀刻线宽误差在3纳米以内,满足工艺的需求。将本课题的光刻胶顶部损失模型应用于实际芯片版图的检查,成功地检测到了若干光刻胶顶部损失的缺陷。更多还原

【Abstract】 With minimum half-pitch shrinking to 28 nm technology node according to "Moore’s law",problem of diffraction in photography is getting more serious,Thus,OPC(Optical Proximity Correction)technique plays much more important role.OPC helps lithography to enhance the exposure resolution and enlarge the process window.In 28 nm process,due to the smaller tolerance to CD(Critical Dimension)variation,the precision of OPC model must be reduced as much as possible.In addition,due to the smaller process window,OPC model needs to have the ability to predict the patterning defects when expose dose and focus drift in a normal amount,to ensure patterns can be correctly formed through lithography process window.This paper selected 28 nm metal layers,which have the most complex pattern routing.To study the characteristics of the 28 nm OPC model,we analyzed the factors which affects the model accuracy,took the corresponding method to improve the accuracy of the model.Also,new OPC techniques were investigated and applied.Firstly,mask model was studied.The parameters of mask model were analyzed,and the optimization method of these parameters was summarized through the experiment.The experiment mask model showed great improvement to the OPC model accuracy.Secondly,PWOPC(Process Window OPC)model was also built.In this paper,the gauge sensitivity to energy/focus variation was defined,by which the screening sensitive data points helped to establish an accurate PWOPC model with a much shortening runtime.Then,the modeling of photoresist top loss was investigated.A compact etch CD model was built to predict the pattern contour after etch.The experiment model error was controlled within 3 nm which can meet the process requirement.With the application of this photoresist top loss model,several patterning defects were successfully detected on the real layout before OPC tape out.更多还原