【作者】 苗龙；

【导师】 孙伟锋； 陈健；

【作者基本信息】 东南大学 ， 集成电路工程（专业学位）， 2018， 硕士

【摘要】 单片集成智能功率驱动芯片属于高低压兼容功率集成电路,其内部集成了逻辑控制、故障检测、驱动电路及高压功率开关器件等,高集成度造成芯片内部功率密度持续增大,芯片温度升高导致芯片功能退化,甚至直接失效,由此可见,片上温度检测电路是单片集成智能功率驱动芯片必不可少的组成部分。因此,高精度片上温度检测电路的研究对于单片集成智能功率驱动芯片的可靠性具有至关重要的意义。本论文首先详细分析了单片集成智能功率驱动芯片的应用背景和工作原理,并对传统片上温度检测技术及其性能进行了深入研究与分析,指出了基于三极管的温度检测电路线性度难以提高的原因是三极管饱和电流I_S的高阶分量带来不可忽视的非线性误差,而基于MOS管的温度检测电路灵敏度和线性度无法提高的原因是MOS管的亚阈值状态不稳且工艺变化较大,很难直接应用于温度检测要求较高的单片集成智能功率驱动芯片。在此背景下,结合单片集成智能功率驱动芯片的实际应用特点,本文提出了一种新型高精度温度检测方法,该方法的基本原理是:让三极管分别工作在正温度系数电流偏置和零温度系数电流偏置条件下,然后分别提取两种偏置工作条件下三极管基极-发射极电压V_BE温度特性表达式中的非线性项,通过倍乘相减的方法,抵消非线性项而实现提升线性度的效果。最后,设计了单片集成智能功率驱动芯片用高线性度、高灵敏度温度检测模块。本论文所设计的温度检测电路基于CSMC 0.5μm 600V绝缘体上硅（Silicon On Insulator,SOI）工艺进行仿真验证、版图设计及流片。测试结果表明,本文所设计的温度检测电路,在-45℃至125℃温度范围内,灵敏度为10.11mV/℃,非线性误差为0.187%,整体静态电流小于100μA,达到了设计指标要求。更多还原

【Abstract】 Single chip intelligent power drive integrated circuit（IPD）is a high and low voltage compatible integrated circuit,which is comprised of logic control circuit,fault detecting circuit,driving circuit and power switching devices etc.High integration obviously increases the power density of the whole chip and the rising temperature of the chip leads to function’s degeneration and even failure of the chip,which subsequently makes the temperature detecting circuit on the chip necessary part of the IPD.Therefore,research and design of high precision temperature detecting circuit is of great importance in the IPD and the realibility of its application system environment.Firstly,not only the implementation principles and working mechanism of the IPD,but also the analysis and the realization theory on the temperature detecting technologies are given in the introduction part,and it is found that the reason for difficulty to improve linearity of temperature detecting circuit based on BJT is that high-order factor in saturation current of BJT brings out nonnegligible non-linearity error,and that the reason for difficulty to improve sensibility and linearity of temperature detecting circuit based on MOSFET is that subthreshold state of MOSFET is unstable and it varies greatly with process,which can not be directly applied to the smart power chip with high demand of temperature detecting circuit.In these thesis,combined the practical application and feature of the IPD,an optimized temperature detecting method is proposed.To be specific,BJTs are driven in saturation region with a proportional to absolute temperature（PTAT）current and an independent of absolute temperature（IOAT）current,respectively.Then,the non-linear error is eliminated by the multiple and subtraction of two base-emitter voltage V_BEPTAT and V_BEIOAT,thereby apparently improving driven the linearity of the temperature detecting voltage.Finally,a temperature detecting module of the IPD with high linearity and high sensibility is designed based on the above principle.In this thesis,the temperature detecting circuit was realized based on the CSMC 0.5μm 600V SOI process,and the layout of the temperature detecting circuit was designed,at last the layout was taped out and tested.Test results show that at supply voltage 15V,within-45℃¹25℃,the sensibility of the temperature detecting voltage V_TS is 10.11mV/℃,the non-linearity error is about 0.187%,and the total current is less than 100μA,all the above indexes meet the design requirements.更多还原