【作者】 王阳；

【导师】 毛陆虹； 王巍；

【作者基本信息】 天津大学 ， 集成电路工程（专业学位）， 2017， 硕士

【摘要】 太赫兹波由于自身所具有的独特性质以及在光谱中的位置使其在通信、电子对抗、雷达、电磁武器、天文学、医学成像、无损检测、环境监测及安全检查等领域存在着广泛的应用前景。近年来,随着无线通信系统不断向高频、高带宽、高集成度及低成本等方向发展,太赫兹波通信成为其中的研究热点之一。CMOS工艺由于其高集成度、低成本等优点,在通信领域有着广泛的应用。尽管目前基于CMOS工艺的太赫兹波源已取得重大进展,但仍有很多新的问题不断的出现,例如,器件的速度限制、功耗过大、频率限制等诸多问题,还有很大的研究开发空间,如何获得稳定的、高频的太赫兹振荡源成为关键问题之一。本文依据LC振荡原理,设计了一种工作在太赫兹频率下的基于标准CMOS工艺的振荡器。具体工作包括:(1)提出了具有频率选择功能特性的负阻电路,这一结构在特定的频率下呈现负阻特性,并通过降低结构的整体电感,把频率推到更高的频率上。(2)基于这一原理,将负阻增强结构和交叉耦合对管结构结合,完成太赫兹振荡器电路的设计,这种结构的振荡器具有频率高、功耗低、成本低及占用芯片面积小等特点。(3)随后通过对不同结构和不同有源器件的振荡器进行仿真对比,确定了振荡器电路的器件参数。(4)然后进行版图设计和后仿真,由于在太赫兹频段下,电路的寄生效应十分显著,所以版图设计以及后仿真变得及其关键,由于工艺库的模型不适用于太赫兹波段,本文提出无源器件通过电磁仿真,再导入电路模拟软件的方法进行设计,即电路的片上电感以及关键信号线均通过HFSS进行电磁场仿真,最终以多端口S参数的形式导入Cadence中进行混合仿真,因此本文所用方法得到的仿真结果比传统电路后仿真结果更加精确。版图后仿真结果表明,本文所设计太赫兹振荡器的输出频率为140 GHz,超出了CMOS器件的截止频率。输出振荡信号的强度为-18.8 dB,在1 MHz频偏处的相位噪声是-88.6 dBc/Hz。所设计的各项指标均满足设计要求,可以应用于太赫兹通信系统中。更多还原

【Abstract】 Due to its unique properties and position in the spectrum,terahertz wave has a variety of potential applications.Such as,communication,electronic warfare,radar,electromagnetic weapons,astronomy,medical imaging,nondestructive testing,environmental monitoring and safety inspections,et al.In recent years,high-speed wireless communication system tends to get broader band,higher integration and lower cost.Therefore,the design of terahertz-wave communication system has become one of the hot topics.At the same time,the CMOS process is widely used in communication system,because of its high integration and low cost.But there is still a lot of questions need to be solved,such as the limit of speed,large power consumption and the limit of frequency.Therefore,how to get stable,high frequency terahertz radiation becomes a key content of the study of Terahertz wave.This thesis designed a CMOS THz oscillator with standard CMOS process based on LC resonance principle.The main achievements of this thesis are as follow.(1)A negative resistance structure with frequency selective feature was proposed.In the specific frequency range,the designed circuit structure can not only generate negative resistance beyond its resonance frequency,but also further pushes it to higher frequency by lowering the overall tank inductance.(2)By combining this structure and the conventional cross-coupled pair,a new differential THz oscillator configuration was constructed.This oscillator has many advantages of high frequency,low power consumption,low cost and small chip area.(3)Through comparison and analysis of different parameters and different structures of the oscillator,an optimal structure was obtained,and then the layout and post simulation were performed.(4)Because the effects of parasitic elements become very important in the terahertz frequency circuit,the passive devices,such as inductors,capacitors and key signal lines,are simulated by HFSS in order to ensure the circuit performance and the simulation accuracy.The multi-port S parameters were imported into Cadence to achieve hybrid simulation.The simulation results are more precise than the traditional post-simulation results.The designed oscillator can operate at a fundamental frequency of about 140 GHz,which is higher than the cutoff frequency of CMOS device.The simulation results indicated that the designed oscillator has a amplitude of-18.8 dB,and a phase noise of-88.6 dBc/Hz at 1 MHz,showing that the oscillator achieved good performance.The oscillator designed in this thesis is expected to be used in THz communication system.更多还原