【作者】 李艳辉；

【导师】 毛陆虹；

【作者基本信息】 天津大学 ， 微电子学与固体电子学， 2014， 硕士

【摘要】 近年来,随着高速无线通信系统朝着更高频率、更宽带宽、更大集成度以及更低成本等方向发展,毫米波频段的通信系统已成为研究的热点,毫米波通信技术广泛地应用于生活的各个方面,但是该项技术还有很大的研究空间,目前尚有很多的问题亟需解决。主流的毫米波信号产生机制有两种:一是采用光学降频技术达到毫米波波段;二是采用电学方法。而采用电学方法产生毫米波也有两个设计方向:一是基于化合物半导体工艺;二是基于硅基标准CMOS工艺。相较于光学降频方法和化合物半导体工艺方法,本论文的标准CMOS工艺实现方法有着集成度高,工艺要求低,成本低,可以实现片上系统和突破工艺最大振荡频率的限制等显著优点。本论文主要研究了一种毫米波频率选择负阻增强型振荡器电路。为获得较高性能的毫米波振荡器,本文首先在传统负阻振荡器结构的基础上,验证了一种具有频率选择功能的负阻增强电路,这一结构在特定的频率下不但能够呈现负阻特性,以增加整体电路的负阻特性,并且可以通过降低结构的整体电感把振荡器的振荡频率推到更高的频率上。将该负阻增强电路和交叉耦合振荡器电路结合,研究具有频率选择负阻增强结构的毫米波振荡器,并对其进行了仿真验证。本文中的毫米波频率选择负阻增强型振荡器采用CMOS 65nm工艺,仿真结果显示振荡器的振荡频率为146GHz,输出功率为-25.77dBm,这使得其工作频率接近了MOS管的截止频率。另外,本文重点研究了在CMOS 65nm工艺下,不同类型电感、场效应晶体管以及电源电压对该振荡器输性能的影响并得出相应结论,这对于更好的理解这一具有高谐振频率的毫米波振荡器具有重要意义。最后根据本文研究结果提出来一些进一步的优化方案。更多还原

【Abstract】 In recent years, high-speed wireless communication system tends to get higher band, higher integration and lower cost. Millimeter-wave technology is used widely in our everyday life,the design of millimeter-wave communication system has become a hot topic. At the same time, however, this technology still has a lot of questions need to be solved.Nowadays, there are two ways to produce mm-wave signal: the first techn ology is based on optics and the second technology based on electronic. What’s more, the electrical method still has two directions: the first method based o n compound semiconductors; second, the method depends on standard silicon s ubstrate CMOS process. Compared with traditional optics mm-wave technology,the method mentioned in this paper has many advantages, such as high integr ation level, less require towards the process, low cost, the possibility of on-chi p system, and break through the limit of maximum oscillation frequency.This paper presents a mm-wave Oscillator With Frequency Selective Negative Resistance(FSNR) Tank Based on CMOS 65 nm process. Firstly, this paper confirms a unique characteristic with a frequency selective feature. This FSNR tank not only generates negative resistance beyond its resonance frequency, but also further pushes it higher by lowering the overall tank inductance. Integrate the FSNR tank and the conventional cross coupled pair to construct a mm-wave oscillator. Through simulation based on CMOS 65 nm process, the oscillator can operate at a fundamental frequency of about 146 GHz with-25.77 d Bm output power. This frequency closes to the CMOS device cutoff frequency of MOSFET. Secondly, this paper focuses on the research on the effect to the Performance of the oscillator with different inductors, MOSFET and VDD and draws the corresponding conclusions. It is important to better understand the high fundamental frequency mm-wave oscillator. Finally, the results of this study provided some further optimization scheme.更多还原