【作者】 曹华；

【导师】 胡作启；

【作者基本信息】 华中科技大学 ， 软件工程， 2015， 硕士

【摘要】 相变随机存储器是一种利用存储介质在晶态时低阻和非晶态时高阻来实现信息存储的固态非易失性存储器,它拥有优越的存储特性包括非易失性、抗辐照特性、快速读写特性等,是最有可能成为新一代主流的非易失性存储器。综合考虑相变存储器的存储机理、存储单元结构、驱动电路及介质材料性能对存储器特性的影响,利用VC++和MATLAB的混合编程,结合Hspice电路仿真软件,设计了包含登陆模块、电路仿真模块、存储单元性能仿真模块和图形界面输出模块的新型相变存储器仿真软件。通过VC++外部调用Hspice在0.18μm的CMOS工艺下对相变存储单元外部读写电路进行仿真。写电路可以得到脉冲宽度在4ns~150ns可调和脉冲幅度在0.25V~3.0V之间可调的脉冲;读电路包括读电流源以及读出放大器;利用VC截取Hspice产生的pulse.lis文件中脉冲数值的数据,得到COM组件中计算所需脉冲数据。开发的新型相变存储单元仿真软件,包括Client/Server(客户机/服务器)结构、四个功能模块和代码实现。采用通用的应用软件系统结构:三层结构。表述层:GUI(图形用户界面),业务逻辑层(功能实现),数据服务层(数据管理)。利用MATLAB的COM组件技术、VC和MATLAB混合编程对自下而上单元结构、边缘接触式单元结构、工字形单元结构、加热阻层(α-C)自下而上单元结构进行仿真。然后在VC中将编写的软件编译为release版本,即可发布为CRAM.exe的可在不同操作系统上运行的程序。可直接将项目文件复制到需要运行该软件的计算机上,完成了配置系统文件、注册组件后,运行CRAM.exe即可。此外,集成了电路仿真、存储器性能仿真的仿真软件对四种存储单元结构进行仿真;结果表明:对于不同结构参数、材料参数、脉冲数据对存储单元的存储特性都有较大的影响。仿真软件能够在外部驱动电路设计、单元结构设计方面提供指导。更多还原

【Abstract】 Phase-change random access memory is a kind of non-volatile solid-state memory which use of the storage medium in the crystalline state at low resistance and in the amorphous state at high resistance to store information, it has superior features include non-volatile storage, anti-radiation characteristics, fast read and write characteristics, etc., are most likely to become the mainstream of the next generation non-volatile memory.Considering the mechanism of phase change memory cell, memory cell circuit, drive affect the circuit and the material properties of the medium to the memory characteristics, use VC ++ mixed programming MATLAB, combined with Hspice circuit simulation software, designed to the new phase-change memory cell simulation software that contain the landing module, circuit simulation module, memory cell performance simulation module and graphical output module.VC ++ external call Hspice in 0.18μm CMOS process for phase change memory cell external reader and write circuit simulation.Write circuit can be obtained that pulse width is adjustable between 4ns ~ 150 ns and pulse amplitude is adjustable between 0.25 V ~ 3.0V; reading circuit includes a current source and read sense amplifier; using VC interception the pulse.lis file data values witch generated by Hspice to obtain the pulse data that used at COM component calculated.The new phase change memory cell simulation software, including Client / Server structure, four functional modules and code. Using a common application software structure: three-tier structure.Presentation layer: GUI(Graphical User Interface), business logic layer(function realization), data services layer(data management).Using MATLAB COM component technology, VC and MATLAB mixed programming to complete storage performance simulation for bottom-up cell structure, edge-contact cell structure, double-confine cell structure and bottom-up with heat-up layer structure.Then the software will be compiled for the release version and the performability program CRAM.exe can run in different computer.Directly copy the project files to the computers witch needs to run the software then completed system files configuration and registering components, the CRAM.exe can work succeed.In addition, integrated circuit simulation, emulation memory performance simulation software simulation of four memory cell structures; The results show that: for the different structural, material parameters and pulse data values has a greater influence on the storage characteristics of the phase change memory cells.Simulation software emulation for memory cell capable can providing guidance in the design of external driving circuit, the memory cell structure design.更多还原