【作者】 周伟；

【导师】 黄其煜； 陈寿面；

【作者基本信息】 上海交通大学 ， 集成电路工程， 2013， 硕士

【摘要】 20世纪80年代末期和90年代初期发展起来的功率MOSFET和IGBT为代表的集高频、高压和大电流于一身的功率半导体复合器件研制成功,并得到急剧发展和商业化,标志着传统电力电子技术已经进人现代电力电子时代。新型电力电子器件,如GTO,MCT,IGBT等,都需要一个与之并联的快速恢复二极管(FRD),以通过负载中的无功电流,减小电容的充电时间,同时抑制因负载电流瞬时反向而感应的高电压。国外在FRD产品的研发上起步较早,于90年代就已实现批量生产,国内电力电子行业对于新型电力电子器件应用起步较晚,受到市场和技术等因素的限制,未能掌握生产FRD芯片的关键生产工艺和技术。基于国内生产的FRD主要集中在600～1200V的现状,本课题采用对1700V器件作结构和流程仿真设计和优化,通过在生产线上工艺流程技术建立与开发,结果反馈到器件优化验证中,不断完善设计方案,充分运用产学研结合的方式,对1700V器件结构的模拟设计和工艺技术的研究和优化,解决目前国内在超高压IGBT配对FRD批量生产方面的技术问题。通过本课题的研究开发出国内自主的1700V快恢复二极管,为我国自主生产1700V快恢复二极管提供自主技术保障,提高了国内该项自有技术水平,为国家IGBT及配套FRD产业化打下坚实基础。更多还原

【Abstract】 Between the end of 80’and the start of 90’of the 20th century, the power semiconductor devices(power MOSFET and IGBT etc.) compound of high frequency, high voltage and high current have successfully developed, and supported by rapid development and commercialization, marks the traditional power electronics has been come into the era of modern power electronics. Novel power electronic devices, such as the GTO, MCT,IGBT, and so on, require a fast recovery diode (FRD)parallel with it, reactive current through the load, reduce the charging time of capacitor and contain the high induction voltage because of the instantaneous load current reverse. Research of FRD products have been started more early in abroad, and they have reached mass production at 90’ new power electronic devices application in power electronic industry started more late in our country limited by market and technology, the key reason is we didn’t master the process and technology of power device.Based on domestic production of FRD main concentrated in 600-1200V of status, this topics study the structures、use TCAD to simulation and optimization the process condition and device structure for 1700V FRD devices, through the establishment and development of process technology on the 8" production line, to solve currently technical problems in ultra high-voltage FRD device for IGBT module production. Through the combine with R&.D、colleges and production lines to provide independent technical support, improve technical level of the IGBT and matching FRD, enhance the IGBT application on our power electronic industry and other areas.更多还原