【作者】 刘海龙；

【导师】 巴德纯； 刘坤；

【作者基本信息】 东北大学 ， 流体机械及工程， 2012， 硕士

【摘要】 目前,硅薄膜太阳能电池的研究已成为国际光伏领域研究热点,这是由于它相对于单晶硅和多晶硅太阳能电池而言,具有耗材少,成本低的特点,尤其是廉价衬底的引入,使其在成本控制方面具有更强的市场竞争力。本文采用磁控溅射方法制备非晶硅薄膜,通过优化参数,提高薄膜质量,并为最终制备高性能非晶硅薄膜太阳能电池提供理论基础和工艺技术参考。磁控溅射法是一种简单、低温、快速的成膜技术,能够直接使用掺杂靶材代替有毒气体和可燃性气体进行溅射沉积成膜。与其它技术相比,磁控溅射法最大的优势是它的沉积速率快,具有可观的成膜效率和经济效益,该技术有望大幅降低太阳电池成本。本文采用磁控溅射的实验方法在柔性PET及玻璃衬底上制备本征以及硼掺杂非晶硅薄膜。通过SEM、XRD、台阶仪、紫外-分光光度仪以及电化学工作站对薄膜进行表征,并根据检测结果研究了不同衬底以及工艺参数(溅射功率、工作压力)对薄膜结构和性能的影响。结果表明：(1)PET衬底及玻璃衬底对薄膜的表面形貌及结晶状态没有明显影响,而对沉积效率的影响十分显著,相同工艺参数条件下,柔性PET衬底的沉积速率要明显高于玻璃衬底；(2)硼掺杂对薄膜的表面形貌及结晶状态没有明显影响,薄膜经过P型硼掺杂,其导电性能有所改善；(3)相同衬底的条件下,溅射功率对薄膜的表面形貌及结晶状态并无明显影响,而随着溅射功率的增加,沉积速率随之变快,薄膜的厚度增大,使薄膜在可见光范围内透光率降低,再通过计算可知,随着溅射功率的增加,薄膜的吸收系数及消光系数同时降低,光学带隙宽度变化趋势同吸收边发生红移现象吻合。(4)相同衬底的条件下,工作压力对薄膜的表面形貌及结晶状态并无明显影响,而随着工作压力的增加,沉积速率随之变慢,薄膜的厚度减小,使薄膜在可见光范围内透光率增加,再通过计算可知,随着工作压力的增加,薄膜的吸收系数及消光系数同时升高,光学带隙宽度变化趋势同吸收边发生蓝移现象吻合。更多还原

【Abstract】 At present, silicon thin film solar cells have become the focus of the international PV research field, which is due to the advantage of monocrystalline and polycrystalline solar cells, fewer supplies and lower cost, especially the introduction of low-cost substrate. The market competitiveness of silicon thin film solar cells in cost control is much stronger. In this paper, amorphous silicon thin film is prepared by magnetron sputtering, then the parameters are optimized to improve the quality of the film, and finally, provide a theoretical basis and technology reference to the preparation of high-performance amorphous silicon thin film solar cells. Magnetron sputtering is a simple, low temperature, rapid membrane technology, which takes advantage of doping target sputtering deposition instead of toxic gases and flammable gas doping and film. It is a method of energy-saving, efficient, environmental protection. Compared with other techniques, the biggest advantage of magnetron sputtering is its fast deposition rate, and has an attractive film-forming efficiency and economic benefits, so it is expected to significantly reduce solar cell costs.In this paper, the intrinsic and boron-doped amorphous silicon thin films were deposited by the experimental method of magnetron sputtering on flexible PET and glass substrate. And then they were characterized by SEM, XRD, surface profilometer, UV-spectrophotometer and electrochemical workstation. Furthermore, with analyzing the influence of different substrate and process parameters (sputtering power, working pressure) on the film structure and performance. The results are shown as following:(1) Different substrates had no significant effect on the thin films’surface morphology and crystalline state, whereas under the conditions of the same process parameters, the deposition efficiency is very significant, deposition rate of the flexible PET substrate was significantly higher than the glass substrate’s.(2) Boron’s doping had no significant effect on surface morphology and crystalline state of the film, but the conductive properties of the film to enhanced the conductivity of the thin films;(3)Under the conditions of the same substrate, different sputtering power had no significant impact on the surface morphology and crystalline state of the film. However, with the increase of sputtering power, deposition rate increased remarkably, the film thickness increased, the light transmission rate decreased in the visible range, While the calculation shows that, both the absorption coefficient and extinction coefficient of thin films reduced, the trend of the optical band gap width was consistent with the redshift phenomenon of absorption edge.(4) Under the conditions of the same substrate, different work pressure had no significant impact on the surface morphology and crystalline state of the film. However, with the increase of sputtering power, deposition rate increased remarkably, the film thickness increased, and the light transmission rate decreased in the visible range, While the calculation shows that, both the absorption coefficient and extinction coefficient of thin films reduced, the trend of the optical band gap width was consistent with the blueshift phenomenon of absorption edge.更多还原