【作者】 王伟；

【导师】 杨为；

【作者基本信息】 重庆大学 ， 机械电子工程， 2014， 硕士

【摘要】 刻蚀是半导体工艺的核心技术。随着晶圆半径的增大及其特征尺寸的不断减小，对刻蚀工艺提出了越来越高的要求。本文以最新开发的18英寸湿法刻蚀腔室为对象，研究了包含干法刻蚀的圆筒式腔室内流场、热场及化学场的耦合关系，分析了不同的结构和工艺参数对刻蚀腔室内流速、压强、温度场的影响规律，主要完成了以下研究内容：研究刻蚀机结构、工作原理及流体力学方程、边界条件方程和分析氢氟酸刻蚀二氧化硅工艺的工艺过程，提出了刻蚀速率和刻蚀不均匀性（刻蚀工艺指标）估算公式，其由耗散系数、物质转换系数、物质量通量、晶格结构共同组成；耦合热场、流场、化学场，研究单因素参数对工艺指标的影响，得到了其对刻蚀特性的分布规律。为获得多因素参数和刻蚀工艺的响应数学函数，定量分析多因素对刻蚀的决定性作用，研究响应面法、中心组合设计、遗传算法提出了基于响应面的自适应遗传算法。分析了入口流量、入口半径、阻尼板渗透系数、喷淋板渗透系数等因素与刻蚀工艺性能的映射关系，得到了最优的刻蚀工艺需要的结构参数和工艺参数并被应用于实际工程中。基于以上研究：在阻尼板中心流速极低提出曲面结构改性；基于阻尼板对刻蚀工艺影响不显著提出闭合阻尼板腔室结构；基于出口流速、温度及轴向速度的急剧变化造成晶圆边沿处刻蚀严重提出双出口的结构设计；基于多孔介质渗透压降大提出曲面喷淋板结构。最后根据刻蚀速率空间分布评价新型结构的合理性，得到一些较优的结构。更多还原

【Abstract】 The core of semiconductor process technology is Etching，with the increase of thewafer radius and the decrease of its feature sizes constantly, higher and higherrequirements of etching process is put forward． Based on the new18-inch wet etchingchamber etching, coupling relationship of flow field, thermal field and chemicalreaction is presented in the cylindrical chamber containing dry etching； Interiorfeatures of space distribution of velocity, pressure, temperature is analyzed in theetching chamber with different structure and process parameters，then：By mastering etching machine structure, working principle and its involving fluidmechanics equation and boundary condition equations and analyzing technologicalprocess of hydrofluoric acid etching sio2process, it put forward the etching rate andetching inhomogeneity (etching process indicators) estimation formula, which isdecided by the dissipation coefficient, material conversion coefficient, mass flux, andlattice structure, of coupled thermal field, flow field, field, and research the influence ofsingle factor parameters on the technical index． It gets the influence of the etchingdistribution characteristics by them．For the mathematical functions between parameters and etching process, theadaptive genetic algorithm based on the response surface method (RSM) is put forwardby analyzing of the RSM, central composite design, genetic algorithm． The responserelationship between the Vmass, r3, p1, p2, Gap and etching process research is studiedby the way． It gets the optimal structure parameters and process parameters of etchingprocess, which is adopted in a project．It is found on the above analysis, that: flow rate is extremely low in the center ofthe baffle, thus it puts forward curved surface modification； Closed damping platechamber structure is put forward as the baffle threatening the etching rate and etchinginhomogeneity effect was not significant； A double export structure design aboutetcher is put forward as it seriously causes changes of the exit velocity, temperature andaxial velocity on the edge； Curved surface structure about showerhead is put forward,based on porous medium osmotic pressure drop seriously, then the rationality of the newstructure is assessed based on the spatial distribution of etching rate to find the optimalchamber structure．更多还原