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全实加关联方法对Se31+离子1s2np-1s2n’d态的跃迁行为的理论研究
Theoretical Research on the Ion of Se31+(1s2np-1s2n’d) Transition Behavior with the Full Core Plus Correlation Method
【作者】 刘群;
【作者基本信息】 辽宁师范大学 , 原子与分子物理, 2013, 硕士
【摘要】 本文首先对原子与分子物理的理论研究作了简要的概述,对多电子原子结构做了详细介绍,高离化原子的研究近年来已成为原子与分子结构研究的新领域。本文对高离化类锂Se31+离子的1s2nl (l=p,d;n≤9)的Rydberg序列的电离能、激发能、跃迁能等能量方面作了系统的研究,简述了全实加关联(FCPC)方法的重要思想。为了得到高精度的理论数据,本文还对各项修正做了分析,包括非相对论修正(core修正、高角动量修正)、一级修正、量子电动力学(QED)修正;与此同时,在对精细结构劈裂的计算上,本文将自旋-轨道相互(S-O)作用,自旋-其他轨道(S-O-O)相互作用,QED效应及高阶相对论效应都考虑进去,本文的结果与文献中的数据十分接近。本文另外利用FCPC方法计算了类锂Se31+离子的1s2np-1s2n′d(2≤n≤9,3≤n′≤9)的振子强度分别在长度、速度及加速度的规范下的理论结果。最后,依据QDT(量子亏损)理论,确定了1s2np-1s2n′d(2≤n≤9,3≤n′≤9)的偶极跃迁的振子强度外推到包括连续态的整个领域。
【Abstract】 At the first of this paper,provides an overview to the scope of atomic and molecularphysics.Then this article introduce the multi-electron atom structure,however,the highlycharged ions have been an important reach area to be illustrated.The FCPC method isextended to be calculated the energy structure of1s2nl (l=p,d;n≤9) states of Se31+ion.Thestates include ionization energy;excitation energy and transition energy.After these,the articlealso details the principle and the achievement of Full-core plus correlation with brief words,Inorder to obtain the high-precision theoretical results.At the same time,the contributions fromhigher angular momentum partial wave and the core-correction are also involved.In thecalculation of the fine structure splitting for these states,spin-orbit,spin-other-orbitinteractions,QED contribution and high-order relativistic contribution.The results of this workgenerally agree with some literatures.In addition,this paper calculate the dipole osscillator strengths of1s2np-1s2n′d(2≤n≤9,3≤n′≤9)with the Se31+ion in FCPC wave functions,Finally,according to the theory ofQDT,calculated Se31+ion1s2np-1s2n′d(2≤n≤9,3≤n′≤9) with the quantum defect theory to theion energy and oscillator strength of the theroy predicted accuratelly extrapolated to includethe entire cotinuum state to the domain.
【Key words】 Se31+ion; Ionization potential; Quantum defect; Oscillator strength;