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透明导电ZnO薄膜的制备及其SPP调制器研究

Fabrication of Transparent Conductive ZnO Thin Film and Its SPP Modulator Research

【作者】 陈玮

【导师】 杨光;

【作者基本信息】 华中科技大学 , 物理电子学, 2013, 硕士

【摘要】 透明导电ZnO薄膜不仅仅具有良好的导电性和可见光谱区的高透性,同时在近红外处薄膜折射率实部表现为负值,这样就可以作为表面等离子体基元(SPP)材料来应用研究,相对于传统表面等离子体材料,透明导电ZnO薄膜损耗更低、可调性好且与纳米制造工艺相兼容等优点。本论文在实验上采用脉冲激光沉积工艺方法来实现透明导电ZnO薄膜,通过X射线衍射(XRD)仪、紫外可见光光谱仪(UV-Vis)、光学椭偏仪和霍尔测试仪等设备来实现对薄膜的结构、光学和电学性能分析,并从分析中提取参数来设计模拟SPP调制器。论文的主要内容如下:(1)采用PLD沉积法在石英基片上制备掺杂ZnO薄膜,通过X射线衍射仪分析薄膜结构,得到高外延性ZnO薄膜;利用紫外可见光光度计来分析薄膜的透过率,分析吸收边的变化,结合文献调研,确定制备高载流子浓度的ZnO薄膜工艺参数。实验制备薄膜中基片的温度控制在400-500oC,氧压控制在低于3×10-3Pa以下容易获得预期薄膜。(2)利用光学椭偏仪对透明导电薄膜进行测试,主要分析其在近红外光谱区处的椭圆偏振数据,采用Drude模型从中拟合出薄膜的介电常数和折射率函数,分析薄膜在近红外光谱处的表面等离子体的性质,实验中实现了在大于1550nm波长薄膜的介电常数实部小于零。通过霍尔测试仪测得薄膜的载流子浓度为5.04×1020cm-3。(3)设计采用透明导电ZnO薄膜作为金属层的金属-介质-金属(MIM)结构的调制器,采用COMSOL软件进行模拟分析,来优化调制器的参数。

【Abstract】 Transparent conductive ZnO film not only has good conductivity and high opticaltransmittance in the visible region, but also can serve as high-quality plasmonic materials attelecom wavelengths or in the near IR. Compared with the conventional metals, transparentconductive ZnO film offer many advantages in the growing field of plasmonics materials,including low intrinsic loss, compatibility with standard nanofabrication processes, tunability.This paper is focused on the pulsed laser deposition (PLD) process methods to achievetransparent conductive ZnO film. The thin film structure, optical and electrical performancehas been investigated. Based on the experience the simulation of surface plasmonpolariton(SPP) modulator has also been done. The main contents of the paper are as follows,(1)The Ga-doped and (Ga, Co)-codoped ZnO films were grown on quartz glasssubstrate by PLD. By means of optimization of process parameters through X-ray diffraction(XRD) instrument, ultraviolet visible light spectrometer (UV-Vis), high epitaxy ZnO thinfilm has been achieved.(2)The optical characterization of the film was performed using a spectroscopicellipsometer. The dielectric function in the near IR was retrieved by fitting a Drude oscillatormodel to the ellipsometry data. Through the hall tester measure, the maximum carrierconcentration of the film is5.04×1020cm-3.(3)Using transparent conductive ZnO film as the metal layer in metal-insulator-metal(MIM) structure of the SPP modulator, the performance of the modulator has beenanalysised by COMSOL software simulation.

  • 【分类号】TN304.21
  • 【下载频次】121
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