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射频功率放大器设计

Design of RF Power Amplifier

【作者】 张炀

【导师】 邱景辉;

【作者基本信息】 哈尔滨工业大学 , 电磁场与微波技术, 2013, 硕士

【摘要】 随着射频和微波技术的发展,微波电路的设计要求不断提高,功率放大器作为微波电路中的核心器件,其性能直接决定了整个系统的性能。功率放大器的设计难点在于实现大功率输出,高线性度和高效率。无线通信系统要求功率放大器具有良好的线性度,而手持设备中的放大器还需要具有高效率的特点。通信频带的展宽以及多频通信的需要要求功放能够在超宽带范围内进行工作。本文介绍了功率放大器在不同领域应用的特点并详细的分析了功率放大器的工作原理和主要性能指标,简要介绍了决定功放性能的核心半导体器件的发展并分析了LDMOS功放晶体管的半导体结构。论文详细分析不同电路功能单元电路的结构原理,包括偏置电路和匹配网络等,此外对当前比较流行和成熟的放大器设计技术,包括负载牵引技术,线性化技术和效率增强技术,进行了详细的分析。在此基础上,对课题指标和相关技术进行了深入的分析,介绍了从总体指标的提出到总体电路结构的确定和子电路设计的实现过程。利用ADS仿真软件进行了详细的分析和设计,设计出的整体电路性能满足指标要求本文的主要贡献如下:1.针对项目的特点和总体指标,设计并确定了了总体电路结构和子电路的指标分配。2.根据指标分配和各子电路的要求,设计第一级放大电路侧重于高增益和高线性度,第二级在满足非线性要求的同时提供足够的末级驱动功率,第三级电路实现大功率输出和高效率指标,据此选择了三款不同特点的功放器件。3.在分析PIN二极管器件的基础上,设计了具有电压调节的压控可变衰减器,以适应不同的输入信号源要求。4.详细说明了末级功放电路的设计和实现过程,设计了偏置和电源滤波电路,利用负载牵引技术得到实现大功率输出和高效率特性的最佳阻抗,在此基础上设计了匹配电路。5.利用联合仿真对末级电路版图进行了优化设计。

【Abstract】 With the development of RF and micorwave technology, the requirements ofmicrowave circuit keep getting higher and higher. Power ampilifier(PA) is one of themost important components in microwave circuit, which directly influences thewhole system’s performance.The difficulty of designing PA is to realize high poweroutput, high linearity and high effciency. Wireless communication system requiresPA to be of good lineraity, while handheld device needs good effciency. thebroadening of working communication bandwidth requires PA to be able to work ina ultra wide band.In this paper, working principle and application of PA is analysied.Semiconductor pomponents which decide the PA’s performance is presented,including the LDMOS structure. The details of different function circuit units, suchbias network and match network circuits is introduced. This paper also discussed thestate-of-art PA design technology, including load-pull, linearization, and effciencyenhancement. Based on the analysis of design target, details of the design processfrom general targets, function units design and realization is presented. With thehelp of ADS software, the design results satisfy the requirements.The main work of this article includes:According to the general design target, the circuit structure is designed andanalysised.The first stage ampilifer circuit focuses on high gain and high linearity; thesecond stage is designed to provide enough driving power; and the last stage circuitstresses in high power output and high effciency. Components are choosed for eachcircuit.Based on the analysis of PIN diode, voltage-control attenuator is design tosatisfy different input singal requirement.The details of the last stage circuit is presented, including bias and sourcefilting circuit, matching circuit, etc.The circuit is optimized by schematic-layout co-simulation.

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