【作者】 李琼；

【导师】 徐龙权；

【作者基本信息】 南昌大学 ， 电机与电器， 2013， 硕士

【摘要】 MOCVD(金属有机物化学沉淀)是生产发光材料的大型设备。硅基衬底在反应室提供的环境下生长成发光材料。在硅基衬底的生长过程中,温度对其影响尤为重要。温度分布的均匀性直接影响着发光材料中薄膜沉积的质量以及厚度的一致性,最终决定材料的发光性能。本文首先从理论入手,结合有限元分析软件COMSOL的热--电耦合模块和共轭传热模块,研究MOCVD反应管多种结构参数下石墨盘表面温度场的分布情况。经过模拟计算发现,加热电阻丝的排列方式、基座与电阻丝的距离、基座与喷淋盖的距离、反射板位置与高度、分区加热功率、气体入口流速等因素均对温度场的分布有所影响。论文根据影响的变化情况寻找规律,为反应室结构设计和优化提供理论基础。然后,整合各分块优化参数,对反应室结构进行初步设计。利用有限元分析软件对温度场进行模拟分析计算后发现,该结构仍有不足。根据计算结果,对反应室结构进行优化处理,提出五种优化方案,使得优化后的反应室结构能为硅基衬底的生长提供适宜的温度环境。最后将本文设计的反应室腔体应用在37×2"MOCVD设备上进行外延生产试验。试验结果表明,通过设备外延生产出的发光材料品质优良,外延片各层厚度比较均匀,单片及片间波长均达到455±3nm。更多还原

【Abstract】 MOCVD (metal organic chemical precipitation) is a large-scale equipment for the production of light-emitting materials. The silicon substrate grows in the environment of the reaction chamber into light emitting material. In the growth process of the silicon substrate, the temperature influence is particularly important. Uniform temperature distribution, as the final decision on the luminescent properties of the material, directly affects the consistency of the quality and thickness of the light emitting material in the thin film deposition.First of all, this paper, based on theories, uses COMSOL, finite element analysis software, combine application of heat-electrical coupling module and conjugate heat transfer module to simulate the graphite disk surface temperature field changes under a variety of structural parameters. Outcome of the simulation turns out to find that heating resistance wire arrangement, the distance between the base and the resistance wire, the distance between the base and the spray head, the position and the height of the reflection plate, the heating power and the gas inlet flow rate, all have an impact on the temperature field distribution. According to the evolution of the impact, find the law and provide a theoretical basis to the structural optimization of the reaction chamber.Secondly, integrate the sub-block optimization parameters for the preliminary devise of the structure of the reaction chamber. Using COMSOL to simulate the temperature field in the structure, find that there is still inadequate of the structure. According to the calculation results, put forward five optimization schemes, make out the final design of the structure and parameters to provide the silicon substrate a suitable growth environment of the reaction chamber.Finally, the final design of the reaction chamber cavity practical has been test on the37×2"MOCVD equipment. Quality of the light-emitting material which is produced by the test equipment is good, thickness of the layers of the wafer distributes uniform, and the wavelength of every wafer and between wafers up to455 ±3nm.更多还原