超结场效应器件结构与工艺设计

【作者】 陈伟；

【导师】 王鹏飞； 陈铭；

【作者基本信息】 复旦大学 ， 电子与通信工程， 2012， 硕士

【摘要】 功率器件发明以后迅速得到了广泛研究和应用,功率MOSFET就是其中最受欢迎的器件。但由于功率MOSFET的通态电阻和耐压存在“硅极限”,导致在高压领域功率MOSFET无法使用。后来发明的Super-Junction器件突破了此极限,极大的拓宽了MOSFET器件的应用领域。本文在研究了功率MOSFET的发展历程、器件基本结构和电学特性之后,对Super-Junction器件的原理以及物理模型进行了简要推导,并对Super-Junction器件的制造工艺进行了介绍。在此基础上本文设计了一种目标耐压为600V的Super-Junction MOSFET器件,并利用Sentaurus TCAD软件对所设计的器件进行了工艺仿真。首先进行的是器件元胞设计,在详细的制定了工艺流程之后又增加了一些会影响器件耐压的工艺参数条件例如Cp (Pillar宽度)、P柱N柱掺杂浓度N、刻蚀深度D等,最后仿真得到了BV在600V以上的器件元胞工艺参数,并提取了部分电学参数。随后进行了器件终端设计,通过仿真得到了一种耐压合格的终端结构。最后对Super-Junction器件的工艺规律进行了归纳整理,为实际的制造生产提供理论指导。更多还原

【Abstract】 In the recent years, power devices-especially VDMOS(Vertically Double Diffused Metal Oxide Semiconductor) have been widely studied because of their extensive application in automotive field, industrial electronics, consumer electronics, computer market, etc.. But conventional VDMOS technology for power devices was constrained by the Silicon Limit. It is now improved to have linear relation between OnResistance (Ron) and BreakdownVoltage (BV) instead of the quadratic relation by SJ MOSFET(Super-Junction). When know some VDMOS knowledge, we analysis the device structure, manufacture process and electric theory of SJ MOSFET. Based on this theory we have designed a SJ MOSFET with BV over600V and simulated the manufacture process by means of Senturas-TCAD simulator. Firstly cell of the device were designed and the influence of the key parameters, such as pillar width, pillar concentration and trench depth were analyzed. At the same time, one termination have been designed and simulated. Finally, we got one SJ MOSFET device while the BV was over600V. Characteristics of SJ devices are greatly better than conventional power MOSFET.更多还原