【作者】 刘涛；

【导师】 李合琴；

【作者基本信息】 合肥工业大学 ， 材料学， 2012， 硕士

【摘要】 VO₂是一种热敏功能材料，在68℃会发生从单斜结构半导体相向金红石结构金属相的可逆转变，同时伴随着光学、电学等性能的突变，其在光电开关、光存储、非制冷红外、智能窗等诸多方面有广阔的应用前景，使得VO₂薄膜的制备及性能的研究成为研究热点。第一章介绍了VO₂的晶体结构，相变机理及性能，并阐述VO₂薄膜作为一种新型薄膜材料的应用前景。第二章介绍了VO₂薄膜的常用制备方法，重点介绍了本文实验采用的磁控溅射法的镀膜机理及制备VO₂薄膜的实验过程，实验中采用的薄膜表征检测技术。第三章研究直流磁控溅射法制备VO₂薄膜的工艺，重点研究了氧分压，溅射时间及基底对薄膜相变性能的影响，结果表明：当溅射功率为100W，溅射气压为1.5Pa，氧分压为3%，溅射时间为1h，并在氮气中450℃退火保温2小时的薄膜样品相变性能优异，VO₂含量最多。薄膜的可见光透过率随着溅射时间的减少而增加。第四章采用直流/射频反应磁控共溅射法制备了掺钨的VO₂薄膜及掺钛的VO₂薄膜；采用直流磁控溅射法，通入氮气作为掺杂源制备了掺氮的VO₂薄膜。实验结果表明：掺钨VO₂薄膜的相变温度降低到了37℃，掺钛VO₂薄膜的相变温度升高到了67℃，而掺氮VO₂薄膜的相变温度为55℃，掺杂后VO₂薄膜的相变性能都有所改变。第五章采用直流磁控溅射法制备了TiO₂/VO₂双层膜，还研究了在不同工艺下制备的TiO₂缓冲层对VO_X薄膜性能的影响。综合上述研究成果，用直流磁控溅射法在玻璃基片上先沉积TiO₂缓冲层，再用直流/射频反应磁控共溅射法制备掺钨VO_X薄膜，经过在氮气中退火，得到在TiO₂缓冲层上的掺钨VO₂智能玻璃，研究结果表明：在溅射气压为1Pa，氧分压为20%，Ti靶采用100W直流电源时，所制备的TiO₂缓冲层上的掺钨VO₂薄膜致密，晶粒大小均匀。掺钨VO₂薄膜样品的相变温度降低至35℃，可见光透过率较高，对红外光的屏蔽效果明显。更多还原

【Abstract】 Vanadium dioxide is a kind of thermo-sensitive functional material which changes itsphase reversibly from semiconductor to metal status and accompanies with an abruptchanges in its electrical and optical properties at68℃while heated. It has a wideapplication in many technological fields, such as photo electric switch, optical storage,uncooled infrared detector, intelligent window and so on. The preparing methods andperformances of VO₂thin films have been the researching focuses.The first chapter describes the crystal structure, the phase transformation mechanism,and the applications of VO₂thin film. It also describes the applicable prospects of VO₂thinfilm as a new type of functional thin film materials.The second chapter describes the preparing methods of VO₂thin film. It focuses on thecoating mechanism of the reactive magnetron sputtering and the experimental process ofthe preparing VO₂thin film as well as the characterization techniques used in ourexperiments.Chapter3studies the DC magnetron sputtering processes prepared VO₂thin films. Itfocuses on the influence of partial pressure of oxygen, sputtering time and differentsubstrates on the phase transformation and properties of prepared VO₂thin films. Theexperimental results show with the gas pressure of1.5Pa, the power of100W, the sputteringtime of1hour, the partial pressure of oxygen is3%after annealing in argon at450℃for2hours, the phase transition of the VO₂thin film sample is better, it contains more VO₂phase.With the decreasing of the sputtering time the visible light transmittance of the VO₂thinfilm is increased.Chapter4studies the processes of the W doped VO₂thin films and the Ti doped VO₂thin films prepared by direct current/radio frequency reactive magnetron co-sputtering, andthe N doped VO₂thin films prepared by the DC magnetron sputtering at that the N2is usedas for the dopant source. The experimental results show that the phase transitiontemperature of W-doped VO₂thin film is reduced to37℃, however, the phase transitiontemperature of Ti-doped VO₂thin film is increased to67℃, and the phase transitiontemperature of N-doped VO₂thin film is55℃. The phase transitions of the VO₂thin filmsare changed after doping.In chapter5the TiO₂/VO₂double bilayer were prepared by DC magnetron sputtering,The influences of the TiO₂buffer layers of different process parameters on the phases and properties of prepared VO₂thin films have been studied. Based on the research results, theTiO₂buffer layers were deposited on glass substrate by magnetron sputtering equipment,next W-doped VO_Xthin films were deposited on them by direct current/radio frequencyreactive magnetron co-sputtering, and then they were annealed under nitrogen atmosphere.The W-doped VO₂thermosensitive intelligent glasses that based on the TiO₂buffer layershave been prepared. The results show that when the sputtering gas pressure is1Pa, thepartial pressure of oxygen is20%, and the DC power of Ti target is100W, the W-dopedVO₂thin film has a dense and homogeneous size, and the phase transition temperature ofW-doped VO₂thin film is reduced to35℃，the visible light transmittance is high,and theshielding effect of infrared transmittance is obviously.更多还原