【作者】 李佳；

【导师】 张鹤鸣； 白桦；

【作者基本信息】 西安电子科技大学 ， 软件工程， 2011， 硕士

【摘要】 存储器广泛应用于卫星、航天等具有辐照性的领域。研究表明,辐照后存储器参数退化是该类器件稳定性降低的主要因素之一,因此迫切需要提出一套科学合理的辐照总剂量试验方法,对存储器辐照损伤效应进行研究。本文首先介绍研究背景、研究现状、需要解决的问题。其次,从MOS器件中最常用的SiO2介质材料出发,研究了SiO2介质材料的辐照损伤效应和机理。从MOS管的结构和应用出发,研究了辐照在MOS电路中引起的缺陷和对MOS电路表面物理特性的影响,探讨了MOS器件辐照电参数的退化和辐射损伤的微观机理。第三,通过深入调研和分析国内外存储器总剂量辐照试验的研究成果,获取第一手试验数据,从中确定存储器工作模式、试验中测试参数、不同剂量率辐照等试验条件的规律,同时结合对存储器工艺技术、类型和工作模式机理的分析,总结出各种工作模式,不同剂量率辐照对试验结果的影响、高温退火对总剂量效应试验的影响。第四,通过设计辐照试验,对存储器按设计好的试验程序进行辐照,验证高温加速退火试验程序对稳态总剂量试验结果的影响。最后,简要总结论文的研究工作,并根据存储器应用目的的不同,提出了三种存储器辐照总剂量试验方法及程序。本课题研究分析了大量有价值的数据,对以后开展辐照试验技术研究工作奠定了基础,为我国的大规模集成电路存储器辐照总剂量试验技术提供理论基础,是很有实际意义的。更多还原

【Abstract】 Memory is widely used in satellites, aerospace and other radioactive occasion. Studies have shown that irradiation of such memory device parameter degradation is one of main factors reduce the stability, in order to testing the memory effects of radiation damage, there is an urgent need to introduce a total dose of scientific and reasonable method.The content of this thesis was organized as follows. First, introduced the research background, current situation, problems to be solved. Second, SiO2 dielectric material from the MOS device most commonly used starting, researching the SiO2 dielectric materials effect and mechanism of radiation damage. From the structure and application of MOS pipe, the study of the radiation induced defects in MOS circuits and MOS circuit characteristics of surface physics, MOS device of the radiation degradation of electrical parameters and the microscopic mechanism of radiation damage. Third, through in-depth investigation and analysis of domestic and total dose radiation test of the memory state of research results, to obtain first-hand experimental data from which to determine the memory mode, test parameters, the different experimental conditions such as radiation dose rate law, while combined with the memory process technology, the mechanism of the type and mode of analysis, summed up a variety of operating modes, different dose rate irradiation on the impact of test results, high temperature annealing on the impact of total dose effect test. Fourth, the design of radiation testing, designed for memory testing procedures by radiation, temperature validation test procedures for accelerated annealing test results on the steady state of total dose. Finally, a brief summary of the research paper, and according to the purpose of the different memory applications, memory is the total dose of the three proposed test methods and procedures.This research analyzes a large number of valuable data on radiation test technology for future implementation of the work laid the foundation for China’s large scale integrated circuit memory technology to provide total dose effect test theory, is very meaningful.更多还原