【作者】 张俊杰；

【导师】 孙甲明；

【作者基本信息】 南开大学 ， 凝聚态物理， 2010， 硕士

【摘要】 随着微电子工业的飞速发展,CMOS器件特征尺寸在不断缩小。传统的栅介质材料SiO2已经达到极限厚度而无法满足集成电路技术的要求。因此我们要寻求一种高介电材料来代替SiO2。目前HfO2被认为是最有前景的硅基MOS器件高介电材料。本论文工作主要分为以下两个方面：(1)利用美国NI(National Instruments)公司的虚拟仪器开发软件LabVIEW设计了一套用于半导体发光材料和器件光致和电致发光测量系统(EL&PL Spectra System),整个系统由GPIB总线接口和USB串口将光谱仪、锁相放大器、数据采集器、数字源表与计算机连接,通过LabVIEW软件实现了多种光电测试的自动化。本系统可以进行光致(电致)发光光谱、荧光激发光谱、电流-电压-光强特性、发光器件老化特性、铁电特性等多项测量。(2)利用原子层沉积技术在硅衬底上生长了50nm厚的HfO2薄膜,前驱体为四(二甲基酰胺)铪和水。我们对退火和未退火样品进行了物理、化学特性研究,包括原子力显微测试,X射线衍射,X射线光电子能谱和电流-电压测量。实验结果表明：由四(二甲基酰胺)铪原子层沉积的氧化铪薄膜的击穿场强高于由铪的卤化物制备的HfO2薄膜；薄膜表面的粗糙度和内部的结晶度均随着退火温度的升高而增大。更多还原

【Abstract】 With the rapid development of microelectronics industry, the feature size of CMOS device is scaling down. Silicon dioxide as conventional gate dielectric material has reached the limit thickness and will not meet the requirements of the integrated circuit technology. So we have to find high-k dielectric to replace silicon dioxide. HfO2 is considered as a perspective high-permittivity material for silicon-based metal-oxide-semiconductor devices. In this thesis, the work was presented in two aspects.(1) An electroluminescence and photoluminescence measurement system of semiconductor materials and devices was setup by American National Instrument Company’s virtual instrument environment. The whole test system connects semiconductor laser, spectrometer, lock-in amplifier, data acquisition device, digital source meter with computer by GPIB bus port and USB serial port. The available experiments including EL Spectra, EL I-V, EL Lifetime, PL Spectra and PL Excitation are designed for t he work’s automation and integration.(2) The 50nm thick HfO2 films were grown by atomic layer deposition on Si (100) substrates with the precursors of Hf[N(CH3)2]4 and H2O. The physical and chemical characters of as-deposited and annealed films were studied by AFM, XRD, XPS, and the EL & PL spectra system. These results indicate that:The HfO2 films synthesized by atomic layer deposition system with hafnium tetrakis(dimethylamide) have higher breakdown fields than that prepared by Hafnium halides; The roughness and crystallinity of the films actually became lager with the increasing in annealing temperatures.更多还原