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CMOS集成温度传感器的研究与设计

Research and Design of CMOS Integrated Temperature Sensor

【作者】 张萍

【导师】 张鹤鸣;

【作者基本信息】 西安电子科技大学 , 电力电子与电力传动, 2009, 硕士

【摘要】 科学技术离不开测量,测量的目的就是要获得有关被测对象的物理或化学性质的信息,以便根据这些信息对被测对象进行评价或控制,完成这一功能的器件我们称之为传感器。传感器被广泛应用于工农业生产、科学研究和航空等领域,作为许多应用技术的基础环节,已经成为当今世界发达国家普遍重视并大力发展的高新技术之一。本论文采用正向设计方法,研究设计了一种基于标准CMOS工艺的集成温度传感器,该温度传感器可用于对环境温度及体温的精确测量,具有体积小、测量范围广、精度高的特点。本文主要研究设计内容包括:温度传感器类型及不同测量方法的研究,Σ-Δ转换技术的研究,温度传感器系统结构的研究设计,温度转换器部分各个功能模块的研究设计,数字滤波器的研究设计等。本文研究设计的温度传感器共由两部分组成:集成温度转换器部分及数字滤波器部分。集成温度转换器部分包括:感温元件、正温度系数电流采集电路、负温度系数电流采集电路、1.2V及0.6V带隙基准源、电压比较器、CMOS开关电路及输出缓冲模块等。数字滤波器部分包括:CMOS异步计数器、D触发器与D锁存器、窄脉冲发生电路等。本论文运用Cadence工具的Virtuoso软件对研究设计的温度传感器进行电路设计;并用Spectre电路仿真工具对温度转换器的各个模块电路和整体电路进行了仿真验证,所用器件模型参数均采用台积电0.35μmCMOS工艺模型。温度转换器部分工作电压3V,外接50nf电容时工作频率400KHz,最大功耗不超过0.3mW,可测量温度范围从–20℃到60℃,最小精度0.2℃;其中正温度系数电流的温度变化率为0.01439μA/℃,负温度系数电流的温度变化率为0.03775μA/℃;基准输出电压1.2V和0.6V,温度调整率分别为0.001375mV/℃和0.004375mV/℃;带隙基准中的运算放大器开环增益95dB,相位裕度60°,单位增益带宽为8.6MHz,电源抑制比79dB,失调电压278.05μV;电压比较器增益达到76.5dB,频率850KHz时增益开始下降。各性能参数经仿真验证都满足要求。

【Abstract】 Technology can not develop without measure. Measure aims to acquire the physics or chemistry data about the object, then the data will be used to estimate or control the object, and the parts of an apparatus accomplishing this functional is called sensor. Sensors have abroad application in domains of industry, agriculture, science research, and aviation. And as foundation of many technologies, sensor has been regarded and developed vigorously in many developed countries.This thesis focuses on the study and design of an integrated temperature sensor based on the standard CMOS process. This Temperature sensor can be used for the accurate measurement of the temperature or the ambient temperature, and it has the advantages of small size, wide measuring range and high precision. The major design of this thesis includes the research of the types of temperature sensor and the different measurement methods, the research of theΣ-Δconversion technology, the research and design of the whole system structure of the temperature sensor and every function module of the temperature converter, and the research and design of the digital filter. In this thesis, the temperature sensor can be divided into two parts: integrated temperature converter and digital filter. The integrated temperature converter is composed by temperature component, acquisition circuits of the complementary to absolute temperature and the proportional to absolute temperature, 1.2V and 0.6V high precision bandgap voltage source, voltage comparator, CMOS switch circuit and output buffer module, and etc. The digital filter consists of CMOS asynchronous counter, D trigger and D latch, and narrow pulse circuit.This temperature sensor is designed and simulated by Virtuoso and Spectre which are products of Cadence. All the device models are offered by 0.35μm CMOS process module of TSMC. The working voltage of the temperature converter is 3V, maximum power consumption is less than 0.3mW, working frequency is 400KHz with 50nf external capacitor, and it can measure the temperature ranging from–20℃to 60℃, and the minimum accuracy is 0.2℃. The rate of temperature change of proportional to absolute temperature is 0.01439μA/℃, and of the complementary to absolute temperature is 0.03775μA/℃. The output voltages of bandgap voltage source are 1.2V and 0.6V, and the temperature-adjusted rates are 0.001375mV/℃and 0.004375mV/℃. About the operational amplifier of the bandgap voltage source, its open-loop gain is as high as 95dB, phase margin is 60°, unity gain bandwidth is 8.6MHz, PSRR is 79dB, and the offset voltage is 278.05μV. The gain of the voltage comparator is 76.5dB, and it begins to fall down at the frequency of 850KHz. After simulation all parameters have met the design requirements.

【关键词】 CMOS工艺温度传感器集成
【Key words】 CMOS processTemperature sensorIntegration
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