【作者】 陈涛；

【导师】 胡明；

【作者基本信息】 天津大学 ， 微电子学与固体电子学， 2008， 硕士

【摘要】 本文利用直流对靶磁控溅射的方法在氮化硅、导电玻璃、玻璃以及多孔硅四种衬底上制备金属钒薄膜,然后对其退火氧化得到具有较高电阻温度系数的氧化钒薄膜,这是一种本课题组以前未曾尝试过的制备方法。本实验主旨为探讨在每种衬底上制备的氧化钒薄膜各自的电学特性,特别是电阻温度系数与制备条件的关系,利用扫描电子显微镜、X射线光电子能谱分析、X射线衍射等方法对薄膜的微观形貌及物质构成进行表征。采用正交实验法设计实验,对溅射压强、溅射时间、退火温度及保温时间进行了研究,分别得到了四种衬底上制膜的最佳制备工艺,并且总结归纳各种制备条件对氧化钒薄膜电阻温度特性的影响。氮化硅衬底的最佳工艺为:溅射压强1Pa、溅射时间20分钟、退火温度400℃、保温时间1.5小时;导电玻璃衬底的最佳工艺为:溅射压强1.5Pa、溅射时间20分钟、退火温度300℃、保温时间2小时;玻璃衬底的最佳工艺为:溅射压强1Pa、溅射时间10分钟、退火温度400℃、保温时间2小时;多孔硅衬底上的实验,证明高温退火氧化对多孔硅产生了严重损坏。利用扫描电子显微镜、X射线衍射仪和X射线光电子能谱分析法,研究了薄膜的微观形貌和物相组成。根据实验结果,将金属氧化法与课题组以往使用的反应溅射方法进行对比,分析了两种方法的差异及各自的优缺点,拓展了氧化钒薄膜的制备方法。更多还原

【Abstract】 In this paper,vanadium metallic thin films were prepared on silicon nitride substrate,glass substrate,conductive glass substrate and porous silicon substrate with facing targets DC sputtering technique,then the vanadium metallic thin films were annealed.The vanadium oxide thin film made by this way have high TCR values,our team have never experimented in this way by which vanadium oxide thin films were prepared. The major target of this paper is to study the electrical character of the vanadium oxide thin films prepared on different substracts,and especially the relation between TCR and parameters.The effects of the parameters including sputtering pressure, sputtering time, annealing time and annealing temperature on the performance of vanadium oxide thin films are analyzed by choosing different level of these parameters in the orthogonal experiment. The optimal deposition parameters of vanadium oxide thin films were concluded as follow: on silicon nitride substrate, sputtering pressure: 1Pa, sputtering time:20min, annealing temperature: 400℃, annealing time: 1.5h; on conductive glass substrate, sputtering pressure:1.5Pa, sputtering time:20min, annealing temperature:300℃,annealing time:2h; on glass substrate: sputtering pressure:1Pa, sputtering time:10min,annealing temperature:400℃,annealing time:2h.But the result of experiment on the porous silicon substrate proved that if the porous silicon is annealed in a high temperature,it will be damaged badly.By using scan electron microscope(SEM),X-ray diffraction analysis(XRD) and X-ray photoelectron spectroscopy(XPS) analysis,the microappearance and component of the vanadium oxide thin films.According as the result of the experiment, this paper compared the method of metal- oxygenation with reactive sputtering technique,and told the differents between these two method in order to develop the ways of preparing vanadium oxide thin films.更多还原