【作者】 陈勇；

【导师】 方亮；

【作者基本信息】 重庆大学 ， 材料物理与化学， 2008， 硕士

【摘要】 氮化铝薄膜由于具有化学稳定性好、热传导率高、机械强度高、电绝缘性能佳以及高能隙、低热膨胀系数和光学特性优良等特点,可以用做声表面波器件和大功率紫外光学器件的散热材料。本文研究的氮化铝薄膜样品是利用纯度为99.999%的高纯铝靶,在反应气体氮气和工作气体氩气气氛下用直流和射频反应磁控溅射法制备的。并对样品进行了XPS成分分析和XRD结构分析,结果表明:薄膜中含有AlN和少量Al₂O₃及一些其它杂质;薄膜为多晶结构,具有（002）和（101）面择优取向。采用燕山大学的TC-7000型激光热导仪器测试了氮化铝薄膜的热导率,采用105C型耐压测试仪测试了薄膜的击穿电压,并对其进行了分析。氮化铝薄膜表现出良好的绝缘性能,薄膜的抗电强度最大值达到7.5MV/cm。利用WGZ-8型双光束分光光度计测定了其透光率,分析其光学性能,结果表明:随着工作压强和靶距的升高,薄膜的透光率会上升;溅射时间的长短在一定的范围对透光率影响不大;氮分压在一定的范围内就不会对透光率产生太大的影响,超出该范围就会影响氮化铝薄膜的纯度;退火处理可改善薄膜的结晶状态,提高紫外波段的光学性能;制备高透光率氮化铝薄膜样品的最佳条件为工作压强3.0Pa,靶基距7.0cm,基片温度为20℃,N₂/Ar=4/24,溅射时间为45min。在此条件下薄膜的平均透光率都在90%以上。通过在组装LED上的模拟实验研究了导热涂层和氮化铝薄膜对LED灯散热性能的影响。发现加入导热涂层和生长氮化铝薄膜后,LED灯温度上升速度减缓;生长高热导率氮化铝薄膜比加入导热涂层对提高LED的散热效果更为显著。更多还原

【Abstract】 Due to good chemical stability and electrical resistivity, high thermal conductivity and mechanical intensity, wide band gap and low thermal expansion coefficient, AlN thin films can be applied for insulating chips for semiconductor devices with high power, thermal dissipation lagers for large and super-large scale integrated circuits, insulating layers or passivation layers for semiconductor. For its excellent optical properties, AlN can be also used in ultraviolet optical components with high power for thermal conductivity material.AlN thin film was prepared from a 99.999% pure aluminum target by DC and AF reactive magnetron sputtering in nitrogen gas mixed with argon gas. The transmission spectrum of samples has been measured. The transmission of AlN films increase, when the working pressure arises. Distance of target and substrate get longer also increase the transmission of AlN films. As the temperature of substrate get higher, the transmission of AlN films decrease slightly. Nitrogen gas concentration and sputtering time barely take effect on the transmission of AlN films. The optimal condition in preparation procession was also proposed. With the XRD spectrum, it shows the AlN thin films have orientation growth with (002) and (101).The breakdown voltage of AlN thin films have been measured by 105C withstanding voltage tester instrument , meanwhile the thermal conductivity of samples has been measured by TC-7000 laser instrument of YanShan university.we can draw a conclusion that: a certain annealed temperature can increase the breakdown voltage, AlN thin films with optimal breakdown voltage is 7.5MV/cm.In the last part of this thesis, the thermolysis efficiency of LED has been studied. Two points in LED have been chosen for temperature measurement. From the simulate experiment on assembled LED, Following result has been obtained after the study of heating curves. The AlN thin films on LED integrated circuit(IC) board can increase the thermolysis efficiency of LED. The higher thermal conductivity of AlN thin films shows that the higher thermolysis efficiency can obtained. The data can offer reference for AlN thin films applying in LED packing.更多还原