【作者】 林楠；

【导师】 薄报学；

【作者基本信息】 长春理工大学 ， 光学， 2008， 硕士

【摘要】 在量子阱激光器理论的基础上,总结并探讨了高功率半导体激光器的器件结构方面的设计优化。为了提高激光器的光学灾变(COMD)水平,进而提高输出功率,提出了一种新的腔面钝化方案,即氮离子腔面钝化方法。采用光荧光谱仪(PL)对钝化效果进行评价,对钝化前后样品的PL谱进行对比,发现钝化前后的样品的PL谱略有改进。并在实验中研究了钝化条件(温度、钝化时间、氮氢气体的流量、射频功率等因素)对钝化效果的影响,通过对PL谱的对比分析,大致得出了以上几个因素对钝化效果影响的规律性结论。对氮钝化的下一步研究和改进,具有一定的参考价值。更多还原

【Abstract】 Based on the quantum well laser theory, summarization and discussion on high power laser diodes are given in the device structural design.For the purpose of improvement of power output characteristics, attempts were made to passivate facet by a plasma nitridation technique, which will increase the catastrophic optical mirror damage(COMD) level. Effectiveness of passivation is evaluated qualitatively by photoluminescence. The passivation effect, characterized by photoluminescence analysis , showed some enhancement in band-edge PL intensity of GaAs after passivation when compared with the same sample before passivation. Influence of passivation conditions on passivation effect in the experiments is studied. The passivation conditions include temperature, time, gas flow rate of nitrogen and hydrogen, power of RF plasma. Some conclusion have been confirmed, which may provide help for further study on the facet passivation by nitridation.更多还原