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高功率半导体激光器腔面镀膜研究

Preparation of High-Power Semiconductor Laser Cavity Face Films

【作者】 王征宇

【导师】 杨晓妍;

【作者基本信息】 长春理工大学 , 物理电子学, 2008, 硕士

【摘要】 本论文较详细的介绍了半导体激光器及其工作原理,并采取在芯片的前端面镀增透膜、后端面镀制高反射膜的方法,以获得高的增益、降低阈值电流、提高激光器的输出功率。采用ZrO2和MgF2组合的多层介质高反膜堆,其具备吸收小,散射少等优点,使得后腔面反射率大幅度提高;前腔面镀制由Al2O3和H4组成的减反膜,使前腔面反射率约大幅度降低,功率效率有显著提高,理论上,与未镀膜的器件相比性能将提高了3倍左右。与此同时,镀制的膜层保护了器件端面,防止氧化和水蒸气的侵蚀。本论文采用了Denton Integrity-36全自动真空镀膜机,利用电子束蒸发离子辅助进行沉积镀膜,并介绍了膜层厚度控制的基础。

【Abstract】 This paper introduces the work and fundamental principle of semiconductor laser.In order to obtain the high gain,reduce the threshold value electric current,enhance the quantum efficiency and the laser output,before the design the back cavity surface plates high -reflection film,the front cavity surface plates the low-reflection membrane.Because the film should have low absorption,low scatter and high threshold value,ZrO2 and MgF2 are selected as the materials of the film,causes the back cavity surface index of reflection will heighten,the front cavity surface plates Al2O3 and H4 membrane send the transmissibility will depress,the power efficiency enhances very prominence,in the abstract,has not compared with the coating component enhanced 3 times.Because the film should have low absorption,low scatter and high threshold value,ZrO2 and MgF2 are selected as the materials of the film.At the same time,the film protects the component end surface from oxygen and water in the air.The film is coated by Denton Integrity-36 vacuum deposition equipment associated with ion beam aid system and introduce the basic of thickness control for film.

  • 【分类号】O484.41
  • 【被引频次】3
  • 【下载频次】515
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