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Au/SiO2复合纳米颗粒膜的制备和模板法制备SiO2纳米线
Preparation Au/SiO2 Composite Nanoparticle Films and SiO2 Nanowires
【作者】 张秋霞;
【导师】 李玉国;
【作者基本信息】 山东师范大学 , 微电子学与固体电子学, 2008, 硕士
【摘要】 在近十几年里,在氧化物基质上生长金属纳米颗粒,由于它们的化学物理特性可以由颗粒的大小、形状和相互作用来改变,引起了世界关注。特别是产生的表面效应和量子尺寸效应,极大的改变了它们的特性。在氧化物基质上生长的金属簇具有一些潜在的应用,比如在异质催化、气敏元件和电磁材料中有重要的应用。在这些金属一氧化物纳米复合材料中,以SiO2为基质的金属纳米簇广泛应用在可控非线性集成光学器件上,这些器件的三阶磁化率χ在表面等离子体共振频率时显著增强。SiO2是玻璃以及以硅为主的微电子器件和光纤的重要组成部分,在电子和光学器件上有着基本和潜在的应用,已逐渐成为一维纳米材料重要的候选者。目前,国内外有关薄膜形式的Au/SiO2纳米粒子复合材料研究很少,因而具有相对比较广阔的研究领域。本文采用磁控溅射技术制备金属纳米颗粒分散氧化物Au/SiO2复合膜。采用此方法是由于溅射法是众多方法中最佳方法之一,它可以在低温和可控条件下获得均匀的表面覆盖,能够将Au颗粒均匀的分散到SiO2基质中,比其它方法好的地方还有它能控制金属含量,使金属含量达到一个很高的值。我们还用自组装方法制备了生长一维纳米材料的模板,将Au/SiO2纳米体系作为生长模板,基于VLS生长机制的催化辅助生长工艺生成SiO2纳米线。1.采用磁控溅射法后退火成功制备了表面均匀覆盖的Au/SiO2复合纳米颗粒膜。并用扫描电子显微镜(SEM)和X射线衍射方法(XRD)对不同温度退火后的Au/SiO2复合薄膜的表面形貌、微观结构进行了表征。得出最佳的生长条件。2.将复合膜1000℃退火时自组装生成空间分布均匀(直径约为70nm)的Au纳米点。半导体自组织量子点材料在光电子与微电子器件领域具有重要的作用。它是制备性能优良的光电子与微电子器件,如光纤通讯激光器、光电探测器、高电子迁移率晶体管、电光调制器等的主要选择对象之一。在众多的制备半导体量子点材料方法中,自组织方法生长量子点有许多特殊的优点,因而自组织Au纳米点的生长和物性表征成为目前低维半导体物理材料和器件研究领域一个热点课题。自组织生成的Au纳米点可作为生长一维纳米材料的模板。3.在自组装的Au催化剂模板上生长SiO2纳米线,直径约为100nm,长度约为4微米,表面光滑,直且粗细均匀。简要说明了纳米线生长的一般过程,纳米线生长过程符合VLS生长机制。
【Abstract】 In the last decades, composite materials based on metal nanoparticles in/on oxide matrices have drawn a worldwide attention thanks to their intriguing chemicophysical properties that can be widely diversified as a function of particle size, shape, and mutual interactions. In particular the progressive increase of surface-to-volume ratio at lower cluster dimensions and the resulting quantum size effects emphasize the role of the electronic structure in determining the metal-metal and metal-oxide interactions, which, in turn, strongly influence the functional propertics. Oxide-supported metal nanoclusters represent intriguing candidates for several advanced applications, featuring heterogeneous catalysis, gas sensing, and magnetic and electronic materials. Among the various metal-oxide nanocomposites, silica-based materials containing metal nanoclusters have been widely investigated for the development of integrated-optical devices with controllable nonlinear properties, whose third-order susceptibility x is strongly enhanced near the surface plasmon resonance(SPR) frequency. Silica (SiO2), which is the important component in glass, Si-based microelectronic derives and optical fibers, is an increasingly important candidate to form 1D nano-materials. At present, the investigate of filmy Au/SiO2 composite materials is rarely at home and abroad, so it has a bigness investigate fild.Au/SiO2 composite nanoparticle films were prepared by magnetron sputtering in this paper. Among the various synthetic approaches, sputtering is one of the most feasible thanks to its inherent versatility and the capability of obtaining a homogeneous surface coverage under controlled processing conditions and at low temperatures. Other key advantages over other preparation routes are the possibility of controlling the metal content up to high concentration. In addition, we formed template to prepare one-dimensional by self-assembly, SiO2 nanowires was achieved, The growth of nanowires were governed by VLS growth mechanism.1. We have prepared Au/SiO2 composite nanoparticle films by magnetron sputtering. The microstructure and the surface morphology of Au/SiO2 composite films annealed at different temperatures were investigated using scanning electron microscope (SEM) and x-ray diffraction (XRD). Find best condition of growth.2. Experiment results indicate that Au nanodots of about 70 nm in diameter well-distributed in space are formed by self-assembly at the annealing temperature of 1000℃. Semiconductor materials with self-organized quantum dot structure play a very important role in photoelectronic and microelectronic field. It is a good candidate for the high quality photoelectronic and microelectronic devices, such as fiber optical communication lasers, photoelectronic detectors, high electron mobility transistors and electro-optic modulators. Among the kinds of method to fabricate the semiconductor quantum dots, self-organized processes is the one of most efficiency methods and attracted significant interest. The studies of growth and physical property of self-organized quantum dots has become one of hot topic in reduced dimensionality physical system. The Au nanodots are formed by self-assembly can be used as the template to prepare one-dimensional nanomaterials.3. The SiO2 nanowires have a clean surface with diameters of around 100nm and lengths of about 4 microns. The growth mechanism is discussed briefly. The growth of nanowires were governed by VLS growth mechanism.
【Key words】 Au/SiO2; composite nanoparticle film; self-assembly; SiO2 nanowire;
- 【网络出版投稿人】 山东师范大学 【网络出版年期】2008年 09期
- 【分类号】TB383.1
- 【被引频次】2
- 【下载频次】191