【作者】 吴成昌；

【导师】 张生才；

【作者基本信息】 天津大学 ， 微电子学与固体电子学， 2006， 硕士

【摘要】 场致发射显示(FED)是发光原理最接近阴极射线管(CRT)的一种平板显示器件。它具有LCD的薄板厚度、CRT般快速的响应速度和较大的动态范围。而冷阴极是FED的重要组成部分,冷阴极材料的研究一直受到人们的广泛关注。纳米晶体硅(nc-Si)场致发射冷阴极作为全硅显示器件,与微电子工艺兼容,可集成到大规模集成电路中,是显示器件的一个重大突破,被认为是最有前途的电子发射极。本文介绍了几种主流平板显示器的发展状况和场致发射冷阴极材料的研究情况,阐述了场致发射的理论基础。研究了nc-Si薄膜的一些制备方法,并利用激光烧蚀沉积和高温快速退火相结合的方法,在n-Si(4-5Ω·cm)衬底上生长了400nm厚的nc-Si量子点薄膜。利用拉曼光谱仪(Raman)、X射线衍射仪(XRD)、透射电子显微镜(TEM)以及原子力显微镜(AFM)等测试仪器对nc-Si薄膜进行全面的表征,发现制备的nc-Si量子点排列紧密、尺寸均匀,且具有很好的单晶结构,制备的nc-Si薄膜晶化比例很高,证实可以通过退火温度来控制nc-Si量子点的大小。对纳米硅冷阴极进行了场致发射特性的测试,提出了纳米硅冷阴极中电子弹道发射的理论模型,并通过Ansys软件进行电场分布的模拟来证明。最后,对实际生产中的墙式支撑问题进行研究,并用Ansys软件对两种不同方案进行模拟比较。更多还原

【Abstract】 Field emission display (FED) device is one of the flat panel display devices whose emission theory is the most close to the cathode-ray tube (CRT). Its thickness is the same as the LCD, the speed on the response and the dynamic scope are close to the CRT. The cold cathode is the important part of the FED whose material attracts researchers’attention. Nanocrystalline silicon (nc-Si) field emission cold cathode is considered as the most promising electronic emitter and a breakthrough in the display device, because it can be compatible to the microelectronic technique as a whole silicon device and will be integrated into the large scale integrate circuit.This paper introduces the development of the flat panel display devices in popularity and the research of the field emission cold cathode material, expatiates the theory of field emission and studies the Fabrication method on nc-Si film. By combination of laser ablated deposition and rapid high temperature anneal, the 400nm-thick nc-Si quantum dots film was fabricated on the n-Si(4-5Ω?cm) substrate. By the instruments of Raman spectrum(Raman)、X-ray diffraction(XRD)、transmission electron microscope(TEM) and atom force microscope(AFM), we study the nc-Si film and find that the quantum dot arranges tightly and equally, which has a good single crystal structure. The crystallization ratio of the nc-Si film is very high and the size of it proves to be controlled by the annealing temperature. We test the field emission character of the nano-silicon cold cathode, come out the electronic ballistic emitter theory model and verify the electronic field distribution by the Ansys software simulation. At last, we research the wall spacer’s problem in the practice and compare the two precepts with the Ansys software.更多还原