磁控溅射法制备Mg_xNi_1-xO薄膜及其表征

【作者】 张志刚；

【导师】 马洪磊；

【作者基本信息】 山东大学 ， 微电子与固体电子学， 2006， 硕士

【摘要】 随着紫外探测技术的发展，价格便宜，性能稳定可靠的紫外探测器件逐渐成为研究的热点之一，尤其是工作于地球表面日盲区波长（240～280nm）范围内的紫外光探测器。日盲区紫外探测器可应用于导弹尾焰探测，化学火焰探测以及短波长光通信等军事，民用领域。目前，对紫外探测器的研究主要集中在AlGaN体系，其主要的制备方法有化学气相沉积（VCD）分子柬外延（MBE）等，虽然采用AlGaN体系作为日盲紫外探测器取得了很大的研究进展，显示出非常诱人的前景，但是受到衬底材料的制约AlGaN体系在光电子器件领域的发展受到很大的限制。同时，制备AlGaN体系工艺复杂，成本较高。而氧化物的制备相对来说工艺比较简单，成本较低。因此，探索可用于日盲紫外探测领域的氧化物材料就显得很有现实意义。氧化物作为紫外探测器的研究，主要集中在ZnO及其MgZnO等合金体系，室温下ZnO禁带宽度约为3.37eV不适合作为日盲紫外探测器，MgZnO虽然在一定程度上调节了其禁带宽度，但是由于MgO与ZnO晶体结构上的差异，两者的固溶度有限，薄膜禁带宽度只能在一定范围内调节，其光谱响应仍不能被调节到日盲光谱范围内。为解决上述问题，本文研究了Mg_xNi_1-xO体系，期望通过调节薄膜的成分，实现对薄膜膜吸收边（禁带宽度）的调制，使之处日盲光谱范围内。 采用JPGF-450型射频磁控溅射仪在石英衬底和玻璃衬底上分别溅射x=0.1、0.2、0.3三种陶瓷靶，改变溅射条件功率分别在P=100W、150W、200W，改变总流量为1帕的氧气／氩气混合工作气体的组成分别在c=0.0、0.2、0.4、0.6、0.8、1.0，背景真空10^-3帕的条件下，溅射30分钟得到的Mg_xNi_1-xO样品，以及在不同的退火条件下的热处理的样品，用X-射线衍射（XRD）、原子力显微镜（AFM）、紫外吸收谱等分析方法加以分析，得到了以下几点结论： 1．衬底的选择很重要。在7059玻璃上没有得到晶型的Mg_xNi_1-xO薄膜，退火以后也不能形成好的结晶，在石英衬底上可以溅射出（200）方向的立方相多晶。 2．薄膜的制备过程对Mg_xNi_1-xO薄膜的质量有影响。改变工艺过程中的参数如功率和工作气体的组成，都能得到晶向一致的（200）方向的多晶Mg_xNi_1-xO薄膜； 但是高功率却使薄膜的晶粒尺寸减小，不如小功率条件下得到的薄膜质量高；增加工作气体中氧气的比例可以明显提高薄膜的致密程度和晶粒大小。 3．样品的热处理影响Mg_xNi_1-xO薄膜的质量。在1100℃的高温退火后可以得到均更多还原

【Abstract】 The cheap, reliable ultraviolet detector becomes a research hotspot with the development of the ultraviolet detect technology, especially for the ultraviolet detector which is worked at the solar blind range whose wave length is in 240～280nm at the surface of the earth. The ultraviolet detector worked in the solar blind region could be used to detect the tail flame of the missile, the chemical flame and short wave light communications in military affairs and civil domain. At present, the research of ultraviolet detector is focused on the AlGaN system, which is made up by VCD or MBE and so on. The development of AlGaN system in photoelectron devices is limited by the substrate material, although a big progress is acquired by using the AlGaN system as the solar blind region ultraviolet detector. At the mean while, the process of the AlGaN system is complex and the cost is high. However the preparation process of oxide is simple, cost is lower. So discover the oxide material which could be used as solar blind region ultraviolet detector is very meaningful. The research of oxide material as ultraviolet detector is focused on ZnO and MgZnO system. At the room temperature, the band gap of ZnO is 3.37eV, which is not suitable for ultraviolet detector. Because the difference between the crystal structure of MgO and ZnO, the solubility of them is finite, the band gap of the film could be adjust only in a region, the spectrum response could not be adjusted to the solar blind region, although the band gap of ZnO is adjusted by MgO. For solve this problem, we research the Mg_xNi_1-xO system hope madding the band gap of the film be adjusted by adjusting the content of the film to the solar blind region.Three chinaware target is sputtered on the silicon and glass substrate which are x=0.1、 0.2、 0.3 with JPGF-450 magnetron sputtering equipment. Change the sputtering power with P=100W、 150W、 200W and the whole flux of 1 pa oxygen and argon with content of c=0.0、 0.2、 0.4、 0.6、 0.8、 1.0 at background vacuum of 10^-3 pa. The Mg_xNi_1-xO sample and the the sample sputtering at different anneal temperature are acquired after 30 minutes. The samples are analyzed by XRD,AFM and ultraviolet spectrum. The results are as followed:1. The substrate is very important There is no crystal generated on the 7059 glass, even after anneal. The film is acquired on the silicon substrate at the direction of （200）更多还原