【作者】 翟雷应；

【导师】 贾虎生；

【作者基本信息】 太原理工大学 ， 材料加工工程， 2006， 硕士

【摘要】 半导体纳米材料所具有的各种量子效应和其独特的性质，使其在未来的各种光、电、机械等功能器件中有着广阔的应用前景。用半导体材料制成的纳米线和碳纳米管等一维纳米材料因其具有独特的光学、电学性能，可以作为理想的纳米尺度电子和光学器件，因此半导体低维材料的研究引起了人们极大的兴趣。 GaN和ZnO在半导体材料的研究中占有重要地位，两者在光学及光电化学方面都有着很优异的性能及广泛的应用。本论文主要以这些半导体材料为研究对象，使用较为简便的工艺流程和反应系统对这些材料的低维纳米结构进行合成。通过XRD、FESEM、HRTEM、EDS和PL谱等测试手段对样品进行了超微结构、物性及光学性能等特性的表征，对各种生长条件下不同材料的生长机理进行深入的分析和探讨。通过测试结果，不断优化制备工艺，提高产品性能。 以我们用Ga₂O₃作为镓源，氨气作为氮源，利用氨化反应法，无任何催化剂的条件下在Si衬底上合成了GaN纳米线。纳米线平直光滑，直径在5-20nm，长度大于30μm，单根纳米线直径均匀。HRTEM分析表明：纳米线以VS机理生长，生长方向为[001]晶向；纳米线表面光滑没更多还原

【Abstract】 Nanostructures semiconductor materials have wide application prospect in optoelectronic, electronic and mechanical functional devices due to their quantum effects and unique properties. One dimensional semiconductor nanomaterials such as nanowires and nanotubes have recently attracted a great deal of attention as ideal materials for nanoscale electronics and optoelectronics due to their unique optical and electrical propertiesGaN and ZnO have been taking the important role in the research of semiconductor materials. They have unique properties and wide application in optical and optoelectronic chemistry. In this paper, the two semiconductor materials were intensively investigated and their low dimensional nanostructures were synthesized by simple technological process and reaction systems. X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission (HRTEM), electron更多还原