【作者】 王丹；

【导师】 任大翠； 田景全；

【作者基本信息】 长春理工大学 ， 微电子学与固体电子学， 2004， 硕士

【摘要】 高功率量子阱激光器是当今高功率激光器发展的重要方向之一，但是大功率量子阱半导体激光器在运转的过程中，来自有源区产生的热量使器件的温度升高，成为限制高功率半导体激光器发展的重要因素。随着功率的日益提高解决器件的散热问题是理论研究和技术发展的重要课题，也就是器件的温度敏感性问题，即T₀问题。 本论文“高特征温度大功率应变量子阱半导体激光器设计研究”，从应变量子阱半导体激光器出发，在材料物理性质和器件结构两个方面分析了影响T₀值的几种因素，设计并制作出具有大的T₀值的AlInGaAs／AlGaAs／GaAs压应变量子阱激光器。器件的输出连续功率都在1W以上，最高工作温度可达60℃，最低阈值电流为0.29A，很大地降低了激光器对温度的敏感性。测试结果与理论设计很好的符合。更多还原

【Abstract】 The main direction of lasers’ development is the high-power semiconductor lasers.In the course of injection current to the semiconductor lasers active layer which will produces amount of heat . The problem of dissipate heat is an important factor which confines the development of high power semiconductor laser.With the increase of the power that the high-power semiconductor lasers which confront to the main problem is the sensitivity to temperature ,it is the characteristic temperature （T₀）.The thesis that the design of high characteristic temperature and high power strained quantum well Semiconductor lasers set out from the quantum well semiconductor structure ,which analyse the effect factor to T₀ in the physical abstract and parts of fabric. The design and fabrication of AlInGaAs/AlGaAs/GaAs squeezed strained quantum well semiconductor lasers are developed in this paper for settling the problem. The highest operation temperature is 60℃ , that the output power is over 1w in room-temperature, the lowest threshold current is 0.29A, it has primely reduce the lasers sensitivity to temperature.更多还原