ITO（铟锡氧化物）纳米粉体的制备及其表征

【作者】 刘雪颖；

【导师】 古映莹；

【作者基本信息】 中南大学 ， 应用化学， 2005， 硕士

【摘要】 本文采用湿化学方法—化学共沉淀法和水热法来分别制备纳米ITO粉体。讨论了共沉淀法中制备条件,如体系pH值、煅烧温度、分散剂的添加方法等对ITO粉体形貌的影响。发现采用硅酸钠为分散剂对共沉淀前驱体进行润洗,再在700℃下煅烧2h可获得晶型生长完全、粒径小、比表面积大、粒度分布均匀的立方结构的纳米ITO粉末。 探索了水热反应条件:反应温度、反应时间、矿化剂和反应介质对制备ITO晶体的影响,在实验的上限温度(<300℃)内不能用水热法直接制备出ITO晶体。但是可以生成结晶性良好的氢氧化铟晶体和羟基铟晶体,作为低温煅烧的前驱体可最后生成六方结构的纳米ITO粉末。 两种方法生成了不同结构的ITO晶体,是由于前驱体的不同导致了煅烧过程中晶体生长面族的不同,最终产生同质异构现象,这可以用配位场理论和晶核形成机理得到很好的解释。 最后测试了ITO样品的电性能、微波和红外吸收性能,讨论了Sn的掺杂量、煅烧温度、前驱体形式等对ITO性能的影响。发现当Sn的掺杂量为10wt%并在水热(220℃,6h)—煅烧(450℃,2h)条件下制得的ITO粉体有良好的微波和红外区吸收性能。本文从晶体生长机理、n型半导体能带理论、迁移率和载流子浓度等因素来解释上述结构。更多还原

【Abstract】 ITO nanopowders have been prepared by chemical coprecipitation method and hydrothermal process. The effects of coprecipitation process parameters on the prepared ITO powders were studied, such as pH, sintering temperature, dispersant and appendent methods. The small particle size, high surface areas, the well particle distribution and fine cubic structure crystallization ITO nanopowders were obtained under the condition of the sintering at 700℃ for 2h after the indium trihyoxide for ITO was washed by dispersant Na₂SiO₃ at filtration.The effects of hydrothermal process parameters on the prepared ITO crystal were investigated, such as hydrothermal temperature, hydrothermal time, mineralizer and medium. ITO crystal was not prepared by hydrothermal method under 300℃.In（OH）₃ crystal and InOOH crystal were prepared by hydrothermal process, then hexagonal structure ITO crystal was obtained through stinering them.Different structure ITO crytal were obtained by two methods. The result shows that different indium trihyoxide cause different faces of growth, which can be well explained by the morphology of crystal.The effects of Sn doped, sintering temperature and indium trihyoxide were discussed after the electronical properties, microwave and infared ray absorbing capability of ITO were tested. It has excellent microwave and infared ray absorbing capability that ITO powders was prepared by hydrothermal（220℃,6h）-sintering （450℃,2h） method and 10wt% of Sn doped level. These phenomena have been discussed based on the mechanism of crystal growth, theory of n-type semiconductor’s energy band, carrier concentration and mobility in this paper.更多还原