【作者】 付强；

【导师】 石玉龙；

【作者基本信息】 青岛科技大学 ， 材料物理与化学， 2005， 硕士

【摘要】 在等离子体辅助化学气相沉积金刚石的设备中,在Si（111）基体上进行沉积金刚石薄膜的实验。在沉积实验之前,首先用细砂纸将硅片打磨5分钟,金刚石研磨膏研磨硅片15分钟,用去离子水冲洗,超声波清洗,取出后吹风机烘干,然后放入反应室沉积金刚石薄膜。本文主要研究了在CH₄/H₂=1%～5%,基体温度为700℃～880℃,偏压为OV～400V,沉积气压为1kPa～5kPa等一系列实验条件下金刚石膜的形核与生长。运用扫描电子显微镜和X射线衍射谱对金刚石样品进行了分析,得到了以下结论:①基片的预处理对金刚石膜的形核有很大的影响,可以有效的提高金刚石的形核密度。②甲烷流量高时,形核密度和生长速率都得到了提高,但是,金刚石膜质量下降。③基体温度对低压金刚石的生长是至关重要的,随着基体温度的提高,生长速率增大,非晶碳成分越少。基体温度不仅影响金刚石的生长速率,也影响金刚石的表面形貌。④加偏压能明显提高金刚石的形核密度,其形核密度达到了10¹¹个/cm²,并且能够提高金刚石的质量,但足偏压的存在将影响灯丝的使用寿命。 我们还进行了金刚石/碳化钛复合膜的沉积实验。将等离子体辅助气相沉积金刚石膜的设备进行改进,利用氢气作为载气把钛酸异丙酯（作为钛源）引入设备中,进行金刚石复合膜的实验。制备了在CH₄/H₂=2%～4%,基体温度为640℃～880℃,偏压为100V～300V等一系列实验条件下的金刚石复合膜。运用扫描电镜、X射线衍射谱和能量扩散电子谱对金刚石复合膜进行了分析。实验结果发现:①复合膜层中的钛含量随着载气增加而增加。②基体温度升高,沉积速率增大,并且复合膜质量提高③金刚石复合膜层中,碳化钛主要呈[111]取向。更多还原

【Abstract】 The diamond film was prepared on Si（111） by the plasma assistant hot-filament chemical vapor deposition. Before the experiment, the thin sand paper was first employed to nick the wafer for 5 minutes. The diamond abrasive abraded the wafer for 15 minutes. Then the wafer was cleaned in the deionized water by the ultrasonic and was dried by the blower. The influences of the nucleation and growth of diamond film were studied on the following conditions: CH₄/H₂=1%⁵%.substrate temperature form 700℃ -880 ℃. bias-voltage form 0V-400V, pressure form 1kpa⁵kpa. The samples were characterized by SEM and XRD. We obtained the following results: ①The pretreated of the substrate played an important role on the diamond nucleation. The nucleation density could be promoted after pretreated.② The nucleation density and deposition rate were increased with increase the content of methane, however the quality of diamond film became bad.③The temperature of the substrate was vital for the diamond deposition. The deposition rate was increased and the noncrystal carbon was decreased with increase the substrate temperature. The substrate temperature not only influenced the deposition rate, but also influenced the surface microstructure of diamond film.④Bias-voltage can obviously improve the nucleation density and improve the quality of diamond film. The nucleation density can reach 10¹¹ cm^-2.We also prepared diamond/TiC composite film. The set-up of plasma assistant hot-filament chemical vapor deposition was mended at the deposition composition更多还原