碳纳米管场致发射显示技术的研究

【作者】 周雪东；

【导师】 雷威；

【作者基本信息】 东南大学 ， 物理电子学， 2004， 硕士

【摘要】 随着真空微电子学的发展,碳纳米管场发射显示(CNT-FED)已经从理论研究进入到了实际应用阶段。在平板显示领域,特别是军事领域,CNT-FED有其固有的许多优势。丝网印刷是制备碳纳米管场发射阴极的廉价有效的方法。本论文通过对碳纳米管浆料配制、阴极电极的制作、阴极烧结方法和表面处理方法等技术的研究,得到了丝网印刷制备碳纳米管场发射阴极的技术流程,并制备了碳纳米管阴极。实验中我们发现阴极上碳纳米管的密度随着烧结温度的升高有所降低,但不明显。结构设计在碳纳米管场发射显示技术的研究中是非常关键的。本文还采用丝网印刷的纳米碳管阴极阵列构造了纳米碳管真空二极结构、三极结构以及双栅极的四极结构,分别进行了各自的场致发射实验,测量了其发射特性曲线。在三极结构和四极结构中的栅极均分别采用LG-Philips公司提供的直体锥形孔和斜体锥形孔的Hop Spacer。二极结构的开启电场略低于2V/μm,阳极电场为3.5 V/μm时发射电流可以达到900μA。通过几种结构的比较,我们认为采用斜体锥形孔Hop Spacer设计的错位四极结构是目前所设计并测试的结构中最好的一种,开启电场低于2 V/μm,调制电场为3.1 V/μm时,阳极电流就达到了900μA。本论文还对CNT-FED显示屏的封装技术进行了研究。研究了封装零件的预处理、低熔点玻璃浆料的涂覆、封装零件的装配、加热封接工艺以及最后的真空除气方法。解决了封装时碳纳米管阴极大量损失、排气管漏气、裂管等问题。成功封接二极结构的碳纳米管场发射显示屏。最后,本文还介绍了开发的二极结构的七段码动态显示屏和32×32矩阵动态显示屏,以及它们各自的驱动电路。实现了频率为1Hz的“0~9”的七段码动态显示。其中32×32矩阵动态显示采用矩阵寻址,用Altera公司的CPLD芯片来产生逻辑控制信号和显示图像或字符所需的数据,实现了动态的汉字字符显示,并具有显示简单的16级灰度动态图像的功能。更多还原

【Abstract】 With the development of vacuum microelectronics, Carbon nanotubes field emission display (CNT-FED) has experienced the transition from fundamental research to application. In the field of flat display, especially for military purpose, CNT-FED has many advantages over other technologies. Screen printing is a low-cost and effective technology to fabricate CNT field emission cathode. In this thesis, by investigating the preparation of CNT paste, fabricating cathode electrode, the sinter of the cathode and surface treatment, we found a way to fabricating CNT field emission cathode by screen printing, and obtained satisfying CNT cathodes. In experiments, we also found that the density of CNT cathode arrays slightly reduces with the rise of the sinter temperature.Structure design is very important for CNT-FED. CNT cathode arrays fabricated by screen printing are used to construct diode-FED, triode-FED and double-gate quadrode-FED. We have done experiments with these structures and measured their field emission characteristic. We use the vertical cone-shaped hole HOP spacer and the oblique cone-shaped hole HOP spacers, which are provided by LG-Philips Display Corporation, as the gate electrodes of triode and quadrode FED. The threshold electric field of diode-FED is less than 2 V/μm, and the emission current can reach 900μA in the anode electric field of 3.5 V/μm. Comparing these structures, we think the best is the interlaced gate quadrode-FED constructed with oblique cone-shaped hole HOP spacer. Its threshold electric field is less than 2 V/μm, and the anode current can reach 900μA in the modulating electric field of 3.1 V/μm.In this thesis, the sealing technique of CNT-FED is also investigated. It includes pretreating components, smearing frit, assembling components, frit sintering and vacuum exhaust. We resolve some problems in the sealing process, such as the loss of CNT on cathode, the leak of vent-pipe, the flaw of display panel, and have successfully sealed diode CNT-FED devices.Finally, we develop “seven segment display” dynamic diode-FED and 32×32 matrix dynamic diode-FED and their driving circuits. The “seven segment display” dynamic diode-FED can display the figures of “0~9” at the frequency of 1Hz. The 32×32 matrix dynamic diode-FED adopts matrix addressing and realizes 16 gradations dynamic display of Chinese characters. The data of display image and logic control signal are provided by CPLD of Altera Corporation.更多还原