【作者】 郝晓辉；

【导师】 徐景智；

【作者基本信息】 河北大学 ， 光学， 2004， 硕士

【摘要】 采用化学沉积法在陶瓷衬底上制备出掺杂的二氧化锡电热膜，并研究了成膜温度、退火工艺、溶液成分以及掺杂浓度对电热膜的电阻、电阻温度特性以及红外辐射性能的影响。实验结果表明：通过控制基体温度和退火条件（退火温度及退火时间等）可以改变膜电阻。随基体温度的升高，膜电阻降低，最佳成膜温度在400℃-600℃。掺锑可以改进电热膜的耐温性、电阻稳定性以及电阻温度系数，最佳锑掺杂量为1.5％。在掺锑量较低时，电热膜电阻显示负的温度特性（NTC），反之，掺锑量较高时，电热膜电阻则表现出正温度特性（PTC），呈现PTC特性的电热膜样品具有自限流和自限温特性。另外，在SnO₂电热膜中加入Cr₂O₃、MnO₂、Ni₂O₃等，可以有效提高电热膜的光谱发射率和辐射效率。更多还原

【Abstract】 Impurity Sno2 electrothermal films have been prepared by means of chemical depositing technique on ceramic substrate.The effects of reaction temperature, annealing techniques, solution component and doping concentration, on room resistance values, resistance-temperature characteristics and infrared radiation characteristics of the electrothermal films have been studied. The result shows that: The resistance of films are changed with substrate temperature and annealing conditions (annealing temperature and annealing time). With the increasing of substrate temperature, resistance of films decrease. Optimum reaction temperature is 400?-600?. Sb-doped can improve temperature resistance of electrothermal films,resistance stability and temperature coefficient of resistance, optimum doping content for Sb-doped is 1.5%. Lowly Sb-doped films show negative temperature characteristics(NTC), contrarily, highly Sb-doped films show positive temperature characteristics(PTC). The films of PTC have characteristics of self-limiting electric current and self-limiting temperature. In addition, SnO2 electrothermal films doped Cr2O3, MnO2, Ni2O3 ,etc. have high spectral emissivity and high radiation efficiency.更多还原